Power Inductor< Pin Type: RCH Series> Type: RCH-1.
FJV3114R - NPN Epitaxial Silicon Transistor
FJV3114R FJV3114R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Res.FJV4114R - PNP Epitaxial Silicon Transistor
FJV4114R FJV4114R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Res.KSB1149 - PNP Silicon Darlington Transistor
KSB1149 KSB1149 Low Collector Saturation Voltage Built-in Damper Diode at E-C • High DC Current Gain • High Power Dissipation : PC=1.3W (Ta=25°C) 1 .KSC3114 - NPN Epitaxial Silicon Transistor
KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Ga.QSC114 - PLASTIC SILICON INFRARED PHOTOTRANSISTOR
PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSC112 PACKAGE DIMENSIONS 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) QSC113 QSC.CY7C1141V18 - (CY7C11xxV18) SRAM 4-Word Burst Architecture
CY7C1141V18 CY7C1156V18 CY7C1143V18 CY7C1145V18 18-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) Features Separate Independen.CY7C1143V18 - (CY7C11xxV18) SRAM 4-Word Burst Architecture
CY7C1141V18 CY7C1156V18 CY7C1143V18 CY7C1145V18 18-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) Features Separate Independen.TIL114 - Optically-Coupled Isolator
Optically-Coupled Isolator Optoelectronic Products 5-40 TIL 111, TIL 114 TIL116, TIL 117 General Description The TIl111, TIL 114, TIL 116 and TIl117.CY7C1143KV18 - 18-Mbit QDR II+ SRAM Four-Word Burst Architecture
CY7C1143KV18/CY7C1145KV18 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 18-Mbit QDR® II+ SRAM Four-Word Burst Archite.CY7C1145KV18 - 18-Mbit QDR II+ SRAM Four-Word Burst Architecture
CY7C1143KV18/CY7C1145KV18 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 18-Mbit QDR® II+ SRAM Four-Word Burst Archite.74F114 - Dual JK Negative Edge-Triggered Flip-Flop
74F114 Dual JK Negative Edge-Triggered Flip-Flop April 1988 Revised August 1999 74F114 Dual JK Negative Edge-Triggered Flip-Flop with Common Clocks .QRB1114 - PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR
PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 PACKAGE DIMENSIONS 0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM PIN 1 PIN 2 QRB1114 E S E 0.373 (9..QRD1114 - REFLECTIVE OBJECT SENSOR
QRD1113/1114 REFLECTIVE OBJECT SENSOR PACKAGE DIMENSIONS 0.083 (2.11) OPTICAL CENTERLINE 0.240 (6.10) 0.120 (3.05) PIN 1 INDICATOR FEATURES • Phototr.RCH-114 - Power Inductors
Power Inductor< Pin Type: RCH Series> Type: RCH-114 ◆ Product Description ・10.5mm Max. φ, 14.4mm Max. Height. ・Inductance Range: 6.3μH~39mH ・Rated c.CY7C1145V18 - (CY7C11xxV18) SRAM 4-Word Burst Architecture
CY7C1141V18 CY7C1156V18 CY7C1143V18 CY7C1145V18 18-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) Features Separate Independen.