RCH-114 Datasheet | Specifications & PDF Download

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PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSC112 PACKAGE DIMENSIONS 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) QSC113 QSC

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QRD1113/1114 REFLECTIVE OBJECT SENSOR PACKAGE DIMENSIONS 0.083 (2.11) OPTICAL CENTERLINE 0.240 (6.10) 0.120 (3.05) PIN 1 INDICATOR FEATURES • Phototr

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Power Inductor< Pin Type: RCH Series> Type: RCH-114 ◆ Product Description ・10.5mm Max. φ, 14.4mm Max. Height. ・Inductance Range: 6.3μH～39mH ・Rated c

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 CY7C1143KV18/CY7C1145KV18 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 18-Mbit QDR® II+ SRAM Four-Word Burst Archite

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PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 PACKAGE DIMENSIONS 0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM PIN 1 PIN 2 QRB1114 E S E 0.373 (9.

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FJV3114R FJV3114R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Res

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KSB1149 KSB1149 Low Collector Saturation Voltage Built-in Damper Diode at E-C • High DC Current Gain • High Power Dissipation : PC=1.3W (Ta=25°C) 1

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PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 PACKAGE DIMENSIONS 0.175 (4.44) 0.087 (2.22) Ø 0.065 (1.65) QSE114 0.050 (1.27) 0.200 (5.08) Ø 0.0

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CY7C1141V18 CY7C1156V18 CY7C1143V18 CY7C1145V18 18-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) Features Separate Independen

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CY7C1146V18 CY7C1157V18 CY7C1148V18 CY7C1150V18 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Features ■ ■ ■ ■ ■ ■ Functio

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CY7C1148KV18/CY7C1150KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) 18-Mbit DDR II+ SRAM Two-Word Burst Architecture

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FJV4114R FJV4114R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Res

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KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Ga

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CY7C1141V18 CY7C1156V18 CY7C1143V18 CY7C1145V18 18-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) Features Separate Independen

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CY7C1141V18 CY7C1156V18 CY7C1143V18 CY7C1145V18 18-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) Features Separate Independen

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