S-8205A Datasheet | Specifications & PDF Download

Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

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8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to p

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Product Summary V(BR)DSS RDS(on)MAX ID 25mΩ@4.5V 20V 6A 32mΩ@2.5V FS8205A N-Channel Enhancement Mode MOSFET Feature Advanced trench process t

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TA8205AH / AL TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8205AH,TA8205AL 18W BTL × 2CH Audio Power Amplifier The thermal resistan

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Dual N-Channel High Density Trench MOSFET N TYPE BVDSS - TXY8205A 20V ID 6A RDS(ON) (Typ.) () 23mΩ @VGS=4.5V 34mΩ @VGS=2.5V FEATURES High

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MX8205AH N-Channel Enhancement Mode Power MOSFET The MX8205AH uses advanced trench technology to provide excellent RDS(ON), low gate charge and op

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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com FS8205A Dual N-Channel Enhancement Mode MOSFET Features z 20V/6A, RDS(ON)<25mΩ @

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KIA8205A-VB KIA8205A-VB Datasheet Dual N-Channel 25-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 4.5 V 25 0.0

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HD8205A N-Channel Enhancement Mode Power MOSFET Description The HD8205A uses advanced trench technology to provide excellent RDS(ON), low gate charg

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LGD8205ATI 350 V, 20 A N-Channel Ignition IGBT Agency Approvals Environmental Approvals Circuit Diagram Functional Diagram Datasheet Product Summary

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200701 Issued Date : 2007.03.01 Revised Date : 2007.03.12 Page No. : 1/4 8205A Dual N-Channel Enh

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N MOSFET 8205A/8205B/8205C 1. N8205A/8205B/ 8205C 、。 8205A/8205B/8205C 。 2. z z z 2.5V z VBDSB=20V z IDB =B 6A @ VGB S=B 4.5V z 8205A ：

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REV. 1.6 FS8205A-DS-16_EN MAY 2014 For RefPerrFoepOnecRrteTieUOsnNlEy' Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET For RefPerrF

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N-Channel Enhancement Mode MOSFET STN8205A ■DESCRIPTION 20V N-Channel Enhancement Mode MOSFET ■FEATURE The STN8205A is the Dual N-Channel logic en

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TA8205AH / AL TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8205AH,TA8205AL 18W BTL × 2CH Audio Power Amplifier The thermal resistan

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ML8205A DESCRIPTION The ML8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low

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GOFORD 8205A P R ODUC T S UMMAR Y VDSS RDS(ON) ID @ 4.0V (typ) 20V 21mΩ 4A - D1 D2 G1 G2 S1 S2 F E AT UR E S S uper high dense cell desig

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® RT8205A/B/C High Efficiency, Main Power Supply Controllers for Notebook Computers General Description The RT8205A/B/C dual step-down, switch-mode p

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NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circ

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