S-8205A Datasheet | Specifications & PDF Download

8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to p

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Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

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Product Summary V(BR)DSS RDS(on)MAX ID 25mΩ@4.5V 20V 6A 32mΩ@2.5V FS8205A N-Channel Enhancement Mode MOSFET Feature Advanced trench process t

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UMW R UMW 8205A Dual N-Channel Enhancement Mode MOSFET FEATURES ·20V 5A N-channel Trench Mosfet ·RDSON≤27mΩ @Vgs=4.5V, Id=5A ·RDSON≤36mΩ @Vgs=2.5V,

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REV. 1.6 FS8205A-DS-16_EN MAY 2014 For RefPerrFoepOnecRrteTieUOsnNlEy' Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET For RefPerrF

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TA8205AH / AL TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8205AH,TA8205AL 18W BTL × 2CH Audio Power Amplifier The thermal resistan

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ML8205A DESCRIPTION The ML8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low

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HD8205A N-Channel Enhancement Mode Power MOSFET Description The HD8205A uses advanced trench technology to provide excellent RDS(ON), low gate charg

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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com FS8205A Dual N-Channel Enhancement Mode MOSFET Features z 20V/6A, RDS(ON)<25mΩ @

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PE8205A N-Channel Enhancement Mode Power MOSFET Description The PE8205A uses advanced trench technology to provide excellent RDS(ON), low gate charg

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Mos-Tech Semiconductor Co.,LTD. MT8205A N-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON)

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Dual N-Channel High Density Trench MOSFET N TYPE BVDSS - TXY8205A 20V ID 6A RDS(ON) (Typ.) () 23mΩ @VGS=4.5V 34mΩ @VGS=2.5V FEATURES High

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MX8205AH N-Channel Enhancement Mode Power MOSFET The MX8205AH uses advanced trench technology to provide excellent RDS(ON), low gate charge and op

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CEG8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.5V. RDS(ON) = 30mΩ (typ) @VGS = 2.5V.

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N MOSFET 8205A/8205B/8205C 1. N8205A/8205B/ 8205C 、。 8205A/8205B/8205C 。 2. z z z 2.5V z VBDSB=20V z IDB =B 6A @ VGB S=B 4.5V z 8205A ：

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AO8205A Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y VDS S 20V ID R DS (ON) (m ohm)Max 25@VGS = 4 . 5 V 5A

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type N MMOOSFSEFTET Dual N-Channel Enhancement Mode Field Effect Transistor S8205A Features

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STN8205A Dual N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN8205A is the dual N-Channel enhancement mode power field effect transistor whic

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® RT8205A/B/C High Efficiency, Main Power Supply Controllers for Notebook Computers General Description The RT8205A/B/C dual step-down, switch-mode p

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NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circ

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