PC133 SDRAM (Rev.0.5) Oct. '99 64M bit Synchronou.
International Rectifier
14
GPS40B120UD - Insulated Gate Bipolar Transistor
www.DataSheet4U.com PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT VCES = 1.
Diodes Incorporated
8
BAS40BRW - SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
BAS40TW /DW-04 /DW-05 /DW-06 /BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS Features Low Forward Voltage Drop Fast Switching Ultra-Small Surf.
Alpha & Omega Semiconductors
6
AOKS40B65H1 - IGBT
AOKS40B65H1/AOTS40B65H1 650V, 40A Alpha IGBT TM General Description • Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • High efficient .
Mitsubishi Electric Semiconductor
5
S40B - 64M bit Synchronous DRAM
PC133 SDRAM (Rev.0.5) Oct. '99 64M bit Synchronous DRAM M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT) M.
International Rectifier
5
IRGPS40B120UD - Insulated Gate Bipolar Transistor
www.DataSheet4U.com PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT VCES = 1.
IRF
4
IRGPS40B120U - INSULATED GATE BIPOLAR TRANSISTOR
PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capabi.
Jiangsu Changjiang Electronics
4
FBAS40BRW - SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40BRW SURFACE MOUNT SCHOTTKY BARRIER .
UST
4
A2V56S40BTP - 256Mb SDRAM
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com ULTRA SOURCE TECHNOLOGY TEL : 886-2-82263168 CORP. LTD. ㆗ ㆒ 1 50 1 .
Alpha & Omega Semiconductors
3
AOKS40B60D1 - IGBT
General Description • Latest Alpha IGBT (α IGBT) technology • High efficient turn-on di/dt controllability • Very high switching speed • Low turn-off .
International Rectifier
3
IRGPS40B120UDP - Insulated Gate Bipolar Transistor
www.DataSheet4U.com PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Non Punch Through IGBT .
International Rectifier
3
IRGPS40B120UP - INSULATED GATE BIPOLAR TRANSISTOR
www.DataSheet4U.net PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Non Punch Through IGBT Technology. • 10µs S.
Mezza
3
Z2V56S40BTP - 256Mb Synchronous DRAM
：010-8287 3941/42/43/44 ：010-8287 3945 http://www.echip.com.cn 256Mb Synchronous DRAM Specification Z2V56S20BTP Z2V56S30BTP Z2V56S40BTP Deutron Elect.
Mitsubishi
3
M2V64S40BTP-8A - 64M bit Synchronous DRAM
SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP.
LRC
3
LBAS40BST5G - SCHOTTKY BARRIER DIODE
LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. S- Prefix for Automotive a.
Alpha & Omega Semiconductors
2
AOTS40B65H1 - IGBT
AOKS40B65H1/AOTS40B65H1 650V, 40A Alpha IGBT TM General Description • Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • High efficient .
Mitsubishi
2
M2V64S40BTP-7 - 64M bit Synchronous DRAM
SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP.
Mitsubishi
1
M2V64S40BTP - 64M bit Synchronous DRAM
SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP.
Mitsubishi
1
M2V64S40BTP-6 - 64M bit Synchronous DRAM
PC133 SDRAM (Rev.0.5) Oct. '99 64M bit Synchronous DRAM M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT) M.
Mitsubishi
1
M2V64S40BTP-7L - 64M bit Synchronous DRAM
SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP.
Mitsubishi
1
M2V64S40BTP-8 - 64M bit Synchronous DRAM
SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP.