PC133 SDRAM (Rev.0.5) Oct. '99 64M bit Synchronou.
Diodes Incorporated
BAS40BRW - SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
BAS40TW /DW-04 /DW-05 /DW-06 /BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS Features Low Forward Voltage Drop Fast Switching Ultra-Small Surf.A2V56S40BTP - 256Mb SDRAM
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Alpha & Omega Semiconductors
AOKS40B60D1 - IGBT
General Description • Latest Alpha IGBT (α IGBT) technology • High efficient turn-on di/dt controllability • Very high switching speed • Low turn-off .
Alpha & Omega Semiconductors
AOKS40B65H1 - IGBT
AOKS40B65H1/AOTS40B65H1 650V, 40A Alpha IGBT TM General Description • Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • High efficient .
Mitsubishi
M2V64S40BTP-7L - 64M bit Synchronous DRAM
SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP.
Mitsubishi Electric Semiconductor
S40B - 64M bit Synchronous DRAM
PC133 SDRAM (Rev.0.5) Oct. '99 64M bit Synchronous DRAM M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT) M.
Mitsubishi
M2V64S40BTP - 64M bit Synchronous DRAM
SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP.
Mitsubishi
M2V64S40BTP-6 - 64M bit Synchronous DRAM
PC133 SDRAM (Rev.0.5) Oct. '99 64M bit Synchronous DRAM M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT) M.
International Rectifier
GPS40B120UD - Insulated Gate Bipolar Transistor
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International Rectifier
IRGPS40B120UDP - Insulated Gate Bipolar Transistor
www.DataSheet4U.com PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Non Punch Through IGBT .
International Rectifier
IRGPS40B120UP - INSULATED GATE BIPOLAR TRANSISTOR
www.DataSheet4U.net PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Non Punch Through IGBT Technology. • 10µs S.
Mitsubishi
M2V64S40BTP-8 - 64M bit Synchronous DRAM
SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP.
Mitsubishi
M2V64S40BTP-8L - 64M bit Synchronous DRAM
SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP.
Mitsubishi
M2V64S40BTP-10 - 64M bit Synchronous DRAM
SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP.
Mitsubishi
M2V64S40BTP-10L - 64M bit Synchronous DRAM
SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP.
Silan Microelectronics
SFR10S40BS - 400V ULTRA-FAST RECOVERY RECTIFIER
Silan Microelectronics SFR10S40BS_Datasheet 10A, 400V ULTRA-FAST RECOVERY RECTIFIER GENERAL DESCRIPTION SFR10S40BS is an Ultra-Fast Recovery Diode, .
Alpha & Omega Semiconductors
AOTS40B65H1 - IGBT
AOKS40B65H1/AOTS40B65H1 650V, 40A Alpha IGBT TM General Description • Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • High efficient .
IRF
IRGPS40B120U - INSULATED GATE BIPOLAR TRANSISTOR
PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capabi.
International Rectifier
IRGPS40B120UD - Insulated Gate Bipolar Transistor
www.DataSheet4U.com PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT VCES = 1.
Jiangsu Changjiang Electronics
FBAS40BRW - SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40BRW SURFACE MOUNT SCHOTTKY BARRIER .
