S40B Datasheet | Specifications & PDF Download

www.DataSheet4U.net PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Non Punch Through IGBT Technology. • 10µs S

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SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP

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PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capabi

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LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. S- Prefix for Automotive a

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SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP

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PC133 SDRAM (Rev.0.5) Oct. '99 64M bit Synchronous DRAM M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT) M

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SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP

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SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP

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SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP

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Silan Microelectronics SFR10S40BS_Datasheet 10A, 400V ULTRA-FAST RECOVERY RECTIFIER GENERAL DESCRIPTION SFR10S40BS is an Ultra-Fast Recovery Diode,

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AOKS40B65H1/AOTS40B65H1 650V, 40A Alpha IGBT TM General Description • Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • High efficient

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BAS40TW /DW-04 /DW-05 /DW-06 /BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS Features  Low Forward Voltage Drop  Fast Switching  Ultra-Small Surf

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www.DataSheet4U.com PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT VCES = 1

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www.DataSheet4U.com PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT VCES = 1

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www.DataSheet4U.com PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Non Punch Through IGBT

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SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP

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SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP

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LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. S- Prefix for Automotive a

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com ULTRA SOURCE TECHNOLOGY TEL : 886-2-82263168 CORP. LTD. ㆗ ㆒ 1 50 1

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SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP

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