SB110 Datasheet | Specifications & PDF Download

SB170 - SB1100 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient P

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SB120 thru SB1100 Schottky Barrier Rectifiers Reverse Voltage 20 to 100V Forward Current 1.0A Feature & Dimensions Flammability Classification 94V-0 *

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2SB1109, 2SB1110 Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610 Outline TO-126 MO

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isc Silicon PNP Darlington Power Transistor 2SB1102 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain- :

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2SB1103 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 4.0

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

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www.DataSheet.in Preliminary USB1101 USB 2.0 FS Peripheral Transceiver (Preliminary) June 2005 Revised June 2005 USB1101 USB 2.0 FS Peripheral Trans

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SB 120 SB 1100 Axial lead diode Schottky barrier rectifiers diodes SB 120 SB 1100 Forward Current: 1 A Reverse Voltage: 20 to 100 V Features 

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ELECTRONIC SB140 ~ SB1200 Power Schottky Rectifier - 1Amp 40~200Volt □ Features -Low forward voltage drop -High current capability -High reliabilit

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SANGDEST MICROELECTRONICS Technical Data Data Sheet N0873, Rev. - Applications: SB1100 SCHOTTKY RECTIFIER z Switching power supply z Converters z

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 30A Peak  Low Power L

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SB120 THRU SB1100 SCHOTTKY BARRIER RECTIFIER Reverse Voltage – 20 to 100 Volts Forward Current – 1.0 Amperes Features • High current capability • High

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TUSB1106-Q1 www.ti.com SCAS916 – AUGUST 2011 ADVANCED UNIVERSAL SERIAL BUS TRANSCEIVERS Check for Samples: TUSB1106-Q1 FEATURES 1 • Qualified for A

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isc Silicon PNP Darlington Power Transistor 2SB1101 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain- :

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain- : hFE= 100

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HI-SINCERITY MICROELECTRONICS CORP. HSB1109S PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6514 Issued Date : 1993.03.15 Revised Date : 2005.02.14 Pa

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DATA SHEET SB120~SB1100 1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE 50 to 100 Volts FEATURES 1.0 ( 25.4 ) MIN. CURRENT - 1.0 Ampere DO-41 Unit: in

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SB120 THRU SB1100 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere DO-204AL 0.107(2.70) 0.080(2.00) DIA.

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