SB110 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complem

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2SB1109, 2SB1110 Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610 Outline TO-126 MO

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2SB1109, 2SB1110 Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610 Outline TO-126 MO

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SB120-SB1100 SB120 - SB1100 Features • • 1.0 ampere operation at TA = 75°C with no thermal runaway. For use in low voltage, high frequency inverters

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SB170 - SB1100 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient P

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isc Silicon PNP Darlington Power Transistor 2SB1100 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain-

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SB120 thru SB1100 Schottky Barrier Rectifiers Reverse Voltage 20 to 100V Forward Current 1.0A Feature & Dimensions Flammability Classification 94V-0 *

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE=100

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

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SB 120 SB 1100 Axial lead diode Schottky barrier rectifiers diodes SB 120 SB 1100 Forward Current: 1 A Reverse Voltage: 20 to 100 V Features 

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isc Silicon PNP Darlington Power Transistor 2SB1105 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain-

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HI-SINCERITY MICROELECTRONICS CORP. HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2006.02.20 Pag

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1105 DESCRIPTION ·With TO-220C package ·DARLINGT

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DATA SHEET SB120~SB1100 1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE 50 to 100 Volts FEATURES 1.0 ( 25.4 ) MIN. CURRENT - 1.0 Ampere DO-41 Unit: in

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www.DataSheet.in Preliminary USB1101 USB 2.0 FS Peripheral Transceiver (Preliminary) June 2005 Revised June 2005 USB1101 USB 2.0 FS Peripheral Trans

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isc Silicon PNP Darlington Power Transistor 2SB1101 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain- :

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2SB1103 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 4.0

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SB120 THRU SB1100 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere DO-204AL 0.107(2.70) 0.080(2.00) DIA.

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SANGDEST MICROELECTRONICS Technical Data Data Sheet N0873, Rev. - Applications: SB1100 SCHOTTKY RECTIFIER z Switching power supply z Converters z

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