SB1260 Datasheet | Specifications & PDF Download

Power Transistor(-80V,-1A) FEATURES z High breakdown voltage and high current. BVCEO=-80V,IC=-1A z Good hFEVLinearity. z Low VCE(sat). z Complements

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SMD Type Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial p

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WILLAS SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ 2SB1260 THRU FM1200

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2SB1260 / 2SB1181 PNP -1.0A -80V Middle Power Transistor Parameter VCEO IC Value -80V -1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suit

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Plastic-Encapsulate Transistors FEATURES • High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complem

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Elektronische Bauelemente 2SB1260 -1 A, -80 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f

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2SB1260 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package.  / Features ，，， 2SD1898 。 H

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MCC Micro Commercial Components TM
     omponents 20736 Marilla Street Chatsworth  # $ % #

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2SB1260 PNP Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Emitte

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UNISONIC TECHNOLOGIES CO., LTD 2SB1260 POWER TRANSISTOR PNP SILICON TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silico

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SB1220 thru SB12100 Schottky Barrier Rectifiers Reverse Voltage 35 to 100V Forward Current 12A Feature & Dimensions * Plastic package has underwriter

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2SB1 260 TRANSISTOR(PNP) SOT-89-3L FEATURES z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements

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SMD Type PNP Transistors 2SB1260-HF Transistors ■ Features ● Hight breakdown voltage and high current. ● Low collector-emitter saturation voltage V

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1260 TRANSISTOR (PNP) FEATURES z Power Transistor z H

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SB 1220 SB 12100 -2 =  >  3  >  >  + 0+  3  >  >  +   >   > 2 /5 6 $ 4 /= 6 $ 4 /== 6 $ 4  $ $

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High Current Power Inductor - CSB1260 Series Outline: Magnetic shielded structure: excellent resistance to electro magnetic interference(EMI) Flat w

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SB1220 SB12100 SB1220 SB12100 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2006-12-08 Nominal current Nennstrom Ø 5.4 ±

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SB1220TL SB12100TL .3 >  ?  4  ?  ?  + 1+  4  ?  ?  +   ?   ? 3 06 7 $ 5 0> 7 $ 5 0>> 7 $ 5  $ $

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