SC1200 Datasheet | Specifications & PDF Download

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MSC1200 MSC1201 MSC1202 SBAS317E − APRIL 2004 − REVISED MAY 2006 Precision AnalogĆtoĆDigital Converter (ADC) and CurrentĆOutput DigitalĆtoĆAnalog Conv

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FEDL1200V-03 FEDL1200V-03 This version: Sep. 2000 MSC1200-01/1200V-01 Previous version: Nov. 1997 www.DataSheet4U.com ¡ Semiconductor MSC1200-01/120

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FEDL1200V-03 FEDL1200V-03 This version: Sep. 2000 MSC1200-01/1200V-01 Previous version: Nov. 1997 www.DataSheet4U.com ¡ Semiconductor MSC1200-01/120

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AMD Geode™ SC1200/SC1201 Processor Data Book March 2004 Publication ID: Revision 7.1 AMD Geode™ SC1200/SC1201 Processor Data Book © 2004 Advanced Mi

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DATASHEET UF4SC120030K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 30 mohm Rev. B, January 2

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DATASHEET UF4SC120023K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 23 mohm Rev. B, January 2

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DATASHEET UF3SC120016K3S CASE CASE D (2) G (1) 1 23 S (3) 1200V-16mW SiC FET Rev. B, December 2019 Description This SiC FET device is based on

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1200V-8.6mW SiC FET DATASHEET UF3SC120009K4S CASE CASE D (1) Rev. B, December 2019 Description This SiC FET device is based on a unique ‘cascode’

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DATASHEET UG3SC120009K4S CASE JG (4) CASE D (1) Silicon Carbide (SiC) Combo JFET - EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 7.6 mohm Rev. C,

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DATASHEET UF4SC120023B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 23 mohm Rev. B, January 2025 Description Ta

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