SD211 Datasheet | Specifications & PDF Download

LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo

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Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G

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High-Speed Analo N-Channel DMOS FETs CORPORATION SD211 / SD213 / SD215 FEATURES DESCRIPTION The Calogic SD211 is a 30V analog switch driver with buil

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INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2110 DESCRIPTION ·Collector-Emit

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LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo

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SD211DE/SST211 Series N-Channel Lateral DMOS FETs Product Summary Part Number SD211DE SD213DE SD215DE SST211 SST213 SST215 V(BR)DS Min (V) 30 10 20

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PSD211R ZPSD211R, ZPSD211RV Low Cost Field Programmable Microcontroller Peripherals FEATURES SUMMARY s Single Supply Voltage: – 5 V±10% for PSD211R an

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www.DataSheet4U.com 2SD2111 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Em

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Vol

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Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G

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Elektronische Bauelemente 2SD2118 5A , 50V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

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2SD2118(BR3DA2118D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN 。Silicon NPN transistor in a TO-252 Plastic Package. / Features hFE ，，

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n-channel dual enhancement mode -o lateral D-MOS FETs c::4 designed lor. · · Q CI) • Wideband DiHerential Amplifiers • Cascode High Slew Rate Amplifie

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Low VCE(sat) Transistor (strobe flash) FEATURES  Low VCE(sat) VCE(sat)=0.25V(Typ). (IC/IB-4A/0.1A) Pb Lead-free  Excellent DC current gain chara

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2SD2114K High-current Gain Medium Power Transistor (20V, 500mA) Parameter VCEO IC Value 20V 0.5A lFeatures 1)High DC current gain 2)High emitter-ba

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2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector

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2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector

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Ordering number:EN3204 Features · Darlington connection. · High DC current gain. · Large current capacity, wide ASO. NPN Epitaxial Planar Silicon Tra

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Low VCE(sat) transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain ch

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SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD2119 Advance Information 320 RGB x 240 TFT LCD Driver Integrated Power Circuit, Source and Gate Driver

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