SD211 Datasheet | Specifications & PDF Download

Low VCE(sat) transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain ch

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Vol

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD211 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Large curre

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High-Speed Analo N-Channel DMOS FETs CORPORATION SD211 / SD213 / SD215 FEATURES DESCRIPTION The Calogic SD211 is a 30V analog switch driver with buil

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2008.04.09 Page No. : 1/5 HSD2118J LOW VCE(sat) TRA

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SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED PRODUCT SUMMARY PART NUMBER SD211DE SD213DE SD215DE SST211 SST213 SST215 V(BR)DS Mi

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2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector

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2SD2114K High-current Gain Medium Power Transistor (20V, 500mA) Parameter VCEO IC Value 20V 0.5A lFeatures 1)High DC current gain 2)High emitter-ba

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Elektronische Bauelemente 2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fre

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MMBTSD2114 NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage E

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ISD2100 ISD ChipCorder® ISD2100 Series DataSheet The information described in this document is the exclusive intellectual property of Nuvoton Techno

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PSD211R ZPSD211R, ZPSD211RV Low Cost Field Programmable Microcontroller Peripherals FEATURES SUMMARY s Single Supply Voltage: – 5 V±10% for PSD211R a

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PSD211R ZPSD211R, ZPSD211RV Low Cost Field Programmable Microcontroller Peripherals FEATURES SUMMARY s Single Supply Voltage: – 5 V±10% for PSD211R a

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LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo

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LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo

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www.DataSheet4U.com 2SD2111 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Em

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SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) PRODUCT SUMMARY Part Number SD211DE-

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INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2110 DESCRIPTION ·Collector-Emit

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR (NPN) FEATURES z High DC current gain. z

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