SF-3215 Datasheet | Specifications & PDF Download

HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS

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HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS

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TUNING FORK UNIT SF-3215 Applications Mobile Equipment / Portable Equipment etc. Features Ultra thin / Dimensions (3.2 1.5 0.9) High reliability whi

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HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS

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HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS

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2SK3215 Silicon N Channel MOS FET High Speed Power Switching ADE-208-764(Z) Target Specification 1st. Edition December 1998 Features • Low on-resista

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www.DataSheet4U.com INFRA-RED EMITTING DIODES AP3216F3C AP3216SF4C Features WATER Description F3 Made with Gallium Arsenide Infrared Emitting dio

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HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS

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www.DataSheet4U.com High Voltage Trigger Transformer ELECTRONICS INC. EPC3215G-X • Used as Trigger Transformer in Photoflash Circuits • Operating T

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Elektronische Bauelemente SST3215 2.2A , 150V , RDS(ON) 315mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h

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P-Channel  V (D-S) MOSFET '74  ZZZGLQ WHNMS PRODUCT SUMMARY VDS (V) -  RDS(on) (:) (Max.) 0.0  at VGS = - 4.5 V 0.0 at VGS = - 2.5 V

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HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS

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PD- 91792 IRL3215 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat

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HY3215W N-Channel Enhancement Mode MOSFET Feature  150V/130A RDS(ON)= 11.5mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Haloge

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PD - 95405 IRL3215PbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Te

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Elektronische Bauelemente SST3215B 2.2A, 150V, RDS(O ) 320mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal

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Elektronische Bauelemente SSD3215B-C 6A, 150V, RDS(O ) 340mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal

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Elektronische Bauelemente SSG3215B-C 1.7A, 150V, RDS(O ) 330mΩ Dual- Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies

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