SF-BF-10 Datasheet | Specifications & PDF Download

PD - 95162 IRF7101PbF l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l D

Rating: 1 ★ (9 votes)

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

Rating: 1 ★ (8 votes)

APT10090BFLL APT10090SFLL 1000V 12A 0.900W BFLL D3PAK TO-247 POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-C

Rating: 1 ★ (8 votes)

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High

Rating: 1 ★ (7 votes)

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High

Rating: 1 ★ (7 votes)

PD - 95361A IRF1010ZPbF IRF1010ZSPbF Features IRF1010ZLPbF l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature

Rating: 1 ★ (7 votes)

BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized

Rating: 1 ★ (6 votes)

BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized

Rating: 1 ★ (6 votes)

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

Rating: 1 ★ (6 votes)

BF 1009 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized

Rating: 1 ★ (6 votes)

BF1009S Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing

Rating: 1 ★ (6 votes)

l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching

Rating: 1 ★ (6 votes)

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network •

Rating: 1 ★ (5 votes)

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network •

Rating: 1 ★ (5 votes)

BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias netwo

Rating: 1 ★ (5 votes)

BF1009S Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing

Rating: 1 ★ (5 votes)

Rating: 1 ★ (5 votes)

PD - 96213 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching G l Hard

Rating: 1 ★ (5 votes)

www.DataSheet4U.com PD -95576 Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL1104S) l Low-profile through-hole (IRL1104L)

Rating: 1 ★ (5 votes)

PD - 94966 IRF1010NPbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature

Rating: 1 ★ (5 votes)