SI2302 Datasheet | Specifications & PDF Download

Features • Rugged and Reliable • Lead Free Product is Acquired • High Dense Cell Design for Extremely Low RDS(ON) • Epoxy Meets UL 94 V-0 Flammability

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SI2302 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 85m Ω 115mΩ Features Advanced tre

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SI2302-VB SI2302-VB Datasheet N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at

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SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 — 20 November 2001 M3D088 Product data 1. Description N-channel enhancement mode

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Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.085 @ VGS = 4.5 V 20 0.115 @ VGS = 2.5 V ID (A) 2.

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SMD Type N-Channel MOSFET SI2302DS-HF (KI2302DS-HF) ■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A ● Pb−F

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www.vishay.com Si2302CDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET SOT-23 (TO-236) D 3 FEATURES • TrenchFET® power MOSFET • Material categoriza

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SMD Type N-Channel Enhancement MOSFET SI2302DS (KI2302DS) ■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A

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SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2302 N-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLIC

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N-Channel 2.5-V (G-S) MOSFET Si2302ADS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.060 at VGS = 4.5 V 0.115 at VGS = 2.5 V ID (A)

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www.vishay.com Si2302DDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: O2 1 G Top View PRODUCT SUMMARY VDS (V)

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ASI2302 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2302 is Designed for General purpose Class C Power Amplifier Applications up to 3000 MH

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SI2302DS-T1-GE3 www.VBsemi.com SI2302DS-T1-GE3 N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 a

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MCC R Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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SI2302S SI2302S SI2302S 45 2.8A 2.8 10 Shenzhen Meitai Microelectronics Co., Ltd WWW.MTWDZ.CN SI2302S Shenzhen Meitai Microelectronics Co., Lt

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20V N-Cha SI2302 VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 3.6A 85m Ω 115mΩ Features Advanced trench process technology High D

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SI2302S 20V/2.8A NChannel Advanced Power MOSFET Features • Low RDS(on) @VGS=4.5V • 3.3V Logic Level Control • N Channel SOT23 Package • Pb−Free, RoHS

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UMW SI2302A 20V N-ChanneI MOSFET 1.Description The SI2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operatio

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