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DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semico

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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 0.8 GHz • 18.5 dB Typical Gain

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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 0.8 GHz • 18.5 dB Typical Gain

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www.DataSheet4U.com BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwi

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www.DataSheet4U.com BIPOLARICS, INC. Part Number B12V114 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND AP

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www.DataSheet4U.com BIPOLARICS, INC Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C

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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 3.0 GHz • 9.0 dB Typical Gain

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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 0.8 GHz • 18.5 dB Typical Gain

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® SiW1750 Baseband Processor Data Sheet Bluetooth™ Solutions 1 INTRODUCTION The SiW1750 Baseband Processor is part of Silicon Wave's second-generatio

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ZGM130S Z-Wave 700 SiP Module Data Sheet The Silicon Labs Z-Wave 700 SiP Module, ZGM130S, is a fully integrated Z-Wave module, enabling rapid develop

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ZGM130S Z-Wave 700 SiP Module Data Sheet The Silicon Labs Z-Wave 700 SiP Module, ZGM130S, is a fully integrated Z-Wave module, enabling rapid develop

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DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are

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HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5

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HiRel NPN Silicon RF Transistor Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For l

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HiRel Silicon Schottky Diode Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Herme

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PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA805T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MO

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