SILICON wave Datasheet | Specifications & PDF Download

MRF5812 NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz

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www.DataSheet4U.com NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Vol

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MRF10031 Microwave Power Silicon NPN Transistor 30W (peak), 960–1215MHz, 36V Features  Guaranteed performance @ 960-1215MHz, 36Vdc  Output power: 3

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3 Volt, Low Noise High fT Silicon Transistor Features • • • • • High Performance at VCE = 3V Low Noise Figure at Small Currents (0.3-2 mA) High Gain (

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Low OperatingVoltage, High fT Bipolar Microwave Transistors Features •Designed for Battery Operation •fT to 10 GHz •Low Voltage Oscillator and Amplifi

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Low Current 8 Volt, Low Noise High fT Silicon Transistor Features • • • • • • Low Current Operation High fT (8 GHz) Low Noise Figure with 1-5 mA Curre

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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 2.0 GHz • 12.1 dB Typical Gain

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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 3.2 GHz • 9.0 dB Typical Gain

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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 0.8 GHz • 18.5 dB Typical Gain

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HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector cur

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HiRel Silicon Schottky Diode Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Herme

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MV1405 TUNING VARACTOR DESCRIPTION: The ASI MV1405 is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA Dim: A

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Bipolar High fT Low Voltage NPN Silicon Transistors Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noi

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www.DataSheet4U.com BIPOLARICS, INC. Part Number B12V114 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND AP

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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 3.0 GHz • 9.0 dB Typical Gain

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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 4.5 GHz • 8.0 dB Typical Gain

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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 4.5 GHz • 8.0 dB Typical Gain

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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • High Dynamic Range Cascadable 50Ω/75Ω Gain Block • 3dB Bandwidth: 50 MHz to 1.3

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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • High Dynamic Range Cascadable 50Ω/75Ω Gain Block • 3dB Bandwidth: 50 MHz to 1.0

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