SK25 Datasheet | Specifications & PDF Download

2SK2545 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2545 DC−DC Converter, Relay Drive and Motor Drive Applications Unit:

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2SK2508 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2508 Switching Regulator and DC−DC Converter and Motor Applications z

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2SK2545 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2545 DC−DC Converter, Relay Drive and Motor Drive Applications Unit:

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Transistors Small switching (60V, 5A) 2SK2503 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-volt

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2SK2507 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2507 Chopper Regulator, DC−DC Converter and Motor Drive Application

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2SK2586 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 7 m typ. • High speed switching • 4

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2SK2542 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2542 Switching Regulator Applications Unit: mm z 4-V gate drive z Lo

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2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2543 Switching Regulator Applications Unit: mm z Low drain−source ON

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MIL-PRF-38534 & 38535 CERTIFIED FACILITY M.S. KENNEDY CORP DUAL HIGH POWER OP-AMP FEATURES: Available as SMD #5962-9083801 HX and 5962-9083803HX Hi

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2SK2520-01MR FAP-II Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant

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www.DataSheet4U.com SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2564 (F8F60VX2) 600V 8A FEATURES Input capacitance (Ciss) is s

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2SK2523-01 FAP-II Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee

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m o c. U 4te e h S ata D . w SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2563 (F4F60VX2) 600V4A FEATURES •œ Input capacitance

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2SK2516-01L,S FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-chann

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2SK2516-01L,S FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-chann

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2SK2562-01R FAP-II Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) www.DataSheet4U.com 2SK2599 Unit: mm : RDS (ON) = 2.9 Ω (typ.) : |Yfs| =

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DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The

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