SK34 Datasheet | Specifications & PDF Download

2SK3446 Silicon N Channel Power MOS FET Power Switching REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005 Features • Capable of 2.5 V g

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MASK32~MASK310 Surface Mount Schottky Rectifiers Features ● ● ● ● ● ● ● Low profile package Ideal for automated placement Ultrafast reverse recovery

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Silicon Junction FETs (Small Signal) 2SK3426 Silicon N-Channel Junction For impedance conversion in low frequency For electret capacitor microphone I

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N-Channel Enhancement Mode MOSFET Feature ●30V/5.8A, RDS(ON) = 35mΩ(MAX) @VGS = 10V. RDS(ON) =40mΩ(MAX) @VGS = 4.5V. RDS(ON) =55mΩ(MAX) @VGS = 2.5V. ●

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3408 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3408 is a switching device wh

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2SK3469-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-

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2SK3461-S-VB 2SK3461-S-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) ()

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PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3433 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3433

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PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3435

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Ordering number : ENN6672 2SK3449 N-Channel Silicon MOSFET 2SK3449 DC / DC Converter Applications Features • • • Package Dimensions unit : mm 2190

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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W TE POWER SEMICONDUCTORS SK32 – S310 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip Ideally Suited for Automatic

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SMD Type Schottky Diodes SK32 ~ SK310 Diodes ■ Features ● For Surface Mount Applications ● Extremely Low Thermal Resistance ● Easy Pick And Place ●

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2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Output power: PO = 7.0 W

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3457 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3457 is N-channel DMOS FET device that features

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www.DataSheet4U.com 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3473 Switching Regulator Applications Unit: mm

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SMD Type MOS Field Effect Transistor 2SK3482 TO-252 www.DataSheet4U.com IC MOSFET Features Super low on-state resistance: RDS(on)1 = 33m RDS(on)2 =

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2SK3447 Silicon N Channel Power MOS FET Power Switching REJ03G1101-0700 (Previous: ADE-208-1567E) Rev.7.00 Sep 07, 2005 Features • Capable of 4 V gat

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