SS12 Datasheet | Specifications & PDF Download

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BSS123 June 2003 BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field e

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® WON-TOP ELECTRONICS SS12 – S100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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SMD Power MOSFET Transistor (N-Channel) BSS123 SMD Power MOSFET Transistor (N-Channel) Features • Low On-Resistance:6Ω • Low input capacitance:20pF •

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Catalog 1308242 Issued 3-03 OEG OMI/OMIH series 16A Miniature Power PC Board Relay Appliances, HVAC, Office Machines. UL File No. E58304 CSA File No

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MOSFET – Power 170 mAmps, 100 Volts N−Channel SOT−23 BSS123LT1G, BVSS123LT1G Features • BVSS Prefix for Automotive and Other Applications Requiring U

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N-Channel 100V MOSFET Features: Surface-mounted package Halogen free Application DC-DC Portable appliance Power management BSS123 BVDSS= 100V , ΩRDS(

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DSS12U THRU DSS125U Technical Data Data Sheet N1873, Rev. A DSS12U THRU DSS125U SINGLE PHASE 1.0AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SOD-123F

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www.DataSheet4U.com DIM600BSS12-E000 DIM600BSS12-E000 Single Switch IGBT Module Replaces issue September 2003, version PDS5651-2.0 PDS5702-1.2 Janua

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www.DataSheet4U.com DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module Replaces February 2004 version, issue PDS5692-2.0 DS5692-3.0 June 20

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BSS123 N-Channel ENHANCEMENT MODE MOSFET Description These N-Channel enhancement mode field effect transistors uses advanced trench technology. Th

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SS12 - S100 — Schottky Rectifier SS12 - S100 Schottky Rectifier Features • Glass-Passivated Junctions • High-Current Capability, Low VF Applications

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www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com D

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www.DataSheet4U.com SMD Schottky Barrier Rectifier SS12-G THRU SS110-G Reverse Voltage: 20~100 Volts Forward Current: 1.0 Amp Features Ideal for surf

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NSS12100UW3TCG 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount d

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UNISONIC TECHNOLOGIES CO., LTD BSS123 Preliminary 170mA, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC BSS123 is an N-channel mode Power MOSFE

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1SS120 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-167B (Z) Rev. 2 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short

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