SS12 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS123LT1/D TMOS FET Transistor N–Channel 3 DRAIN 1 GATE 2 SOURCE BSS123LT1 Motorola

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CYStech Electronics Corp. Spec. No. : C591N3 Issued Date : 2016.12.07 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET BSS123BKN3 B

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Schottky Barrier Rectifiers Production specification SS12--SS14 Features  Metal silicon junction, majority carrier conduction  High surge capabili

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® WON-TOP ELECTRONICS SS12 – S100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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Free Datasheet http://www.datasheet4u.com/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS123 N Channel MOSFET V(BR)DSS 100 V RDS(on)MAX 6Ω@10V 10Ω@

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CYStech Electronics Corp. N-CHANNEL MOSFET BVDSS ID Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : 2013.10.17 Page No. : 1/8 100V VGS=10

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1SS120 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-167B (Z) Rev. 2 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short

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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 4 – APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold PARTMARKING DETAIL – SAA BSS123A S D

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BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Sym

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BSS 124 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 2.5 V Pin 1 G Type BSS 124 Type BSS 124 Pin 2 D Marking

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Web page Sample & buy Tools & software Support & FAQ Document 599-1 High Temp Power Inductors  MSS1260T • Designed for high ambient temperature

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        Data Sheet Customer: Product: Wire Wound Power Inductor – CSS Series Size : 6025/6028/6045/7032/7045/7055/10145/10165 12555/12565/12575

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PSS, PSK Series 9 25 A Switching Regulators Input voltage up to 144 V DC Single output of 3.3 48 V DC No input to output isolation • Efficiency

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BSS 125 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 2.5 V Pin 1 G Type BSS 125 Type BSS 125 BSS 125 BSS 125

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NOT RECOMMENDED FOR NEW DESIGNS USE SS12E-TP~SS110E-TP SERIES MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Ch

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SS12 - S100 — Schottky Rectifier SS12 - S100 Schottky Rectifier Features • Glass-Passivated Junctions • High-Current Capability, Low VF Applications

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RSS125N03 Transistors Switching (30V, 12.5A) RSS125N03 zFeatures 1) Low on-resistance. www.DataSheet4U.com 2) Built-in G-S Protection Diode. 3) Small

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

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