www.vishay.com SS12, SS13, SS14, SS15, SS16 Visha.
Mosel Vitelic
26
MSS1807 - (MSS1807 / MSS1507 / MSS1207 / MSS0907 / MSS0607 / MSS0307) 3/ 6/ 9/ 12 / 15 / 18 VOICE ROM
MOSEL VITELIC INC. MSS0307/S0607/S0907/S1207/S1507/S1807 3"/ 6"/ 9"/ 12" / 15" / 18" VOICE ROM September 1996 Features Single power supply can opera.
MCC
23
BSS123W - N-Channel MOSFET
Features +LJK'HQVH&HOO'HVLJQIRU([WUHPHO\/RZ5'6 21 9ROWDJH&RQWUROOHG6PDOO6LJQDO6ZLWFK 6XUIDFH0RXQW3DFNDJH (SR[\0HHWV8/ 9).
Semiware
23
SS12A - Schottky Barrier Rectifier
R FEATURES Low Power Loss High Efficiency Ideal For Automated Placement Guard Ring For Over-voltage Protection High Surge Current Capability MECHANICAL .
Semiware
22
SS120A - Schottky Barrier Rectifier
R FEATURES Low Power Loss High Efficiency Ideal For Automated Placement Guard Ring For Over-voltage Protection High Surge Current Capability MECHANICAL .
WON-TOP
17
SS12 - 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
® WON-TOP ELECTRONICS SS12 – S100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features Low Forward Voltage Epitaxial Construction with Oxide .
WILLAS
12
SS120 - 1.0AMP SCHOTTKY BARRIER RECTIFIERS
WILLAS 1.0AMP SCHOTTKY BARRIER RECTIFIERS SMA PACKAGE SS12 THRU SS120 FEATURES * Ideal for surface mounted applications * Low leakage current * Meta.
Kexin
11
SS120F - Schottky Barrier Diodes
SMD Type Schottky Barrier Diodes SS12F ~ SS120F TransDisiotodress Ƶ Features ƽ Metal silicon junction, majority carrier conduction ƽ For surface mo.
Dynex Semiconductor
11
DIM2400ESS12-A000 - Single Switch IGBT Module
DIM2400ESS12-A000 Single Switch IGBT Module DS5840-1.1 June 2005 (LN24075) FEATURES • • • • 10µs Short Circuit Withstand Non Punch Through Silicon Is.
SEC
11
SS129 - Unipolar Digital Digital Switch
SS129 Unipolar Hall-Effect Digital Switch Packages Features and Benefits – – – – – – – – – 4.5V to 24V Operation -40℃ to 150℃ Superior temperature o.
Hitachi Semiconductor
10
1SS120 - Silicon Diode
1SS120 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-167B (Z) Rev. 2 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short .
Vishay
10
SS12 - Surface Mount Schottky Barrier Rectifier
www.vishay.com SS12, SS13, SS14, SS15, SS16 Vishay General Semiconductor Surface-Mount Schottky Barrier Rectifier SMA (DO-214AC) Cathode Anode L.
Infineon Technologies
10
BSS123N - Small-Signal-Transistor
OptiMOS™ Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q10.
JCET
9
BSS123 - N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS123 N Channel MOSFET V(BR)DSS 100 V RDS(on)MAX 6Ω@10V 10.
HY
9
SS12A - (SS12A - SS110A) RATING AND CHARACTERTIC CURVES
SS12A thru SS110A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES ●For surface mounted applications ●Metal-Semiconductor junction with guarding ●Ep.
Motorola Inc
8
BSS123LT1 - TMOS FET Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS123LT1/D TMOS FET Transistor N–Channel 3 DRAIN 1 GATE 2 SOURCE BSS123LT1 Motorola .
MCC
8
SS15-L - (SS12-L - SS110-L) 1 Amp Schottky Rectifier
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"#.
ON Semiconductor
8
BSS123LT1G - N-Channel Power MOSFET
MOSFET – Power 170 mAmps, 100 Volts N−Channel SOT−23 BSS123LT1G, BVSS123LT1G Features • BVSS Prefix for Automotive and Other Applications Requiring U.
