SS13 Datasheet | Specifications & PDF Download

BSS138K 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 0.31A Description and Appl

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SOT-  Plastic-Encapsulate MOSFETS BSS138.5 N-Channel 50-V(D-S) MOSFET FEATURE Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed L

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www.DataSheet4U.com 1SS133 Diodes Switching diode 1SS133 Applications High speed switching External dimensions (Units : mm) CATHODE BAND (YELLOW)

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BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor May 2013 BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transis

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LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N–Channel SOT–23 Typical applications are dc–dc converters, power management in portable

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FEATURES • High Reliability Proven Design • DCR4160A42 • Forced Air Cooling • Redundant Fan (Optional) • RC Snubber • Pressure Switch • IR Temperature

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Public BSS131I Final datasheet Small‑Signal Power‑Transistor Features • N‑channel • Enhancement mode • Logic level • Pb‑free lead plating; RoHS comp

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GSDSS12W Series Surface Mount Schottky Rectifiers Product Description Reverse Voltage 20V to 100V Forward Current 1.0A Packages Features „ Ideally s

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1SS133 Diodes Switching diode 1SS133 Applications High speed switching External dimensions (Units : mm) CATHODE BAND (YELLOW) φ0.4±0.1 Features 1

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LESHAN RADIO COMPANY, LTD. Dual Integrated Circuit N-Channel/PN Duals • We declare that the material of product compliance with RoHS requirements.

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LESHAN RADIO COMPANY, LTD. Dual Integrated Circuit N-Channel/PN Duals • We declare that the material of product compliance with RoHS requirements.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ N-Channel Enhancement Mode Logic Level SOT-23 MOSFET Typical applications are dc–dc converters, power manag

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http://www.ncepower.com Pb Free Product BSS138K NCE N-Channel Enhancement Mode Power MOSFET General Features ● VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @

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N - Channel 50-V (D-S) MOSFET MESS138W/MESS138W-G GENERAL DESCRIPTION The MESS138W is the N-Channel logic enhancement mode power field effect transi

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MOSFET – Power, N-Channel, SOT-23 200 mA, 50 V BSS138L, BVSS138L Typical applications are DC−DC converters, power management in portable and battery−

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Main Product Characteristics: VDSS 60V RDS(on) 2.2Ω (Max) ID 0.3A SOT-23 BSS138C Pin Assignments Schematic Diagram Features and Benefits: 

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N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138K Features • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacit

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