SS41 Datasheet | Specifications & PDF Download

SS41F Low Gauss Bipolar Hall-effect Sensor DESCRIPTION The SS41F is a sensitive, bipolar Hall-effect sensor. This magnetic sensor offers reverse powe

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Features and Benefits – 4.5V to 24V Operation – -40°C to 150°C Superior temperature operation – Bipolar technology – Open-collector 25 mA output – Rev

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SS41 Bipolar Hall-Effect Position Sensor Features and Benefits – – – – – – – – – 4.5V to 24V Operation -40℃ to 150℃ Superior temperature operation Bip

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www.DataSheet4U.com SRC DEVICES SIP SERIES REED RELAYS SIL4 DSS4 MVS4 MSS4 DESCRIPTION SRC Devices offers a large selection of molded SIP relays t

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PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat transistor 3 March 2025 Product data sheet 1. General description NPN/PNP low VCEsat transistor pair in a S

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications 1SS419 Unit: mm CATHODE MARK • Small package • Low f

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Features and Benefits – 4.5V to 24V Operation – -40°C to 150°C Superior temperature operation – Bipolar technology – Open-collector 25 mA output – Rev

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Bipolar, Latching, and Unipolar Hall-effect Digital Position Sensor ICs: SS400 Series, SS500 Series 32320997 Issue B Datasheet FEATURES • Quad Hall

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Features and Benefits – 4.5V to 24V Operation – -40°C to 150°C Superior temperature operation – Bipolar technology – Open-collector 25 mA output – Rev

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www.DataSheet4U.com SRC DEVICES SIP SERIES REED RELAYS SIL4 DSS4 MVS4 MSS4 DESCRIPTION SRC Devices offers a large selection of molded SIP relays t

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SS311PT/SS411P Bipolar Hall-effect Digital Position Sensors with Built-in Pull-up Resistor DESCRIPTION The SS311PT/SS411P sensors are small, versatil

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Low-cost Digital Bipolar Hall-effect Sensor ICs, SS41F, SS41G 32312814 Issue A Datasheet FEATURES • Small, leaded, flat TO-92-style package allows

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Bipolar, Latching, and Unipolar Hall-effect Digital Position Sensor ICs: SS400 Series, SS500 Series 32320997 Issue B Datasheet FEATURES • Quad Hall

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Schottky Barrier Diode Silicon Epitaxial 1SS417 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS417 1: Cathod

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1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 Q Top View Marki

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PBSS4140S Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features ，，。 High PC, low V

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT 1SS417CT High Speed Switching Application Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03

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SMD Switching Diode COMCHIP www.comchip.com.tw CDSS4148 High Speed Features Designed for mounting on small surface. High speed switching. High mount

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Features and Benefits – 4.5V to 24V Operation – -40°C to 150°C Superior temperature operation – Bipolar technology – Open-collector 25 mA output – Rev

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Features and Benefits – 4.5V to 24V Operation – -40°C to 150°C Superior temperature operation – Bipolar technology – Open-collector 25 mA output – Rev

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