SS41 Datasheet | Specifications & PDF Download

SS41F Low Gauss Bipolar Hall-effect Sensor DESCRIPTION The SS41F is a sensitive, bipolar Hall-effect sensor. This magnetic sensor offers reverse powe

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DSS4140U LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Epitaxial Plan

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www.DataSheet4U.com SRC DEVICES SIP SERIES REED RELAYS SIL4 DSS4 MVS4 MSS4 DESCRIPTION SRC Devices offers a large selection of molded SIP relays t

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SS41 Bipolar Hall-Effect Position Sensor Features and Benefits – – – – – – – – – 4.5V to 24V Operation -40℃ to 150℃ Superior temperature operation Bip

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www.DataSheet4U.com SRC DEVICES SIP SERIES REED RELAYS SIL4 DSS4 MVS4 MSS4 DESCRIPTION SRC Devices offers a large selection of molded SIP relays t

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SMD Switching Diode COMCHIP www.comchip.com.tw CDSS4148 High Speed Features Designed for mounting on small surface. High speed switching. High mount

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT High Speed Switching Application z Small package z Low forward voltage: VF = 0.23 V (t

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www.DataSheet4U.com SRC DEVICES SIP SERIES REED RELAYS SIL4 DSS4 MVS4 MSS4 DESCRIPTION SRC Devices offers a large selection of molded SIP relays t

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DSS4160V LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Epitaxial Plan

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications 1SS419 Unit: mm CATHODE MARK • Small package • Low f

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application • Low forward voltage : VF (3) = 0.23V (typ.)@ IF = 5m

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1SS417TM HIGH SPEED SWITCHING APPLICATION FEATURES • Small package • Low forward voltage : VF(3)=0.56V(typ.) • Low reverse current : I R=5µA (Max.) •

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1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 Q Top View Marki

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Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS413 1: Cathod

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Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage : VF(3) = 0.50 V (typ.) (

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Features  BVCEO > 60V  IC = 1A High Continuous Collector Current  RCE(SAT) = 180mΩ for a Low Equivalent On-Resistance  Low Saturation Voltage VCE(

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www.DataSheet4U.com SRC DEVICES SIP SERIES REED RELAYS SIL4 DSS4 MVS4 MSS4 DESCRIPTION SRC Devices offers a large selection of molded SIP relays t

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DSS4140V LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Epitaxial Plan

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT 1SS417CT High Speed Switching Application Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03

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Schottky Barrier Diode Silicon Epitaxial 1SS416 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS416 1: Cathod

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