STF Datasheet | Specifications & PDF Download

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Schottky Barrier Rectifier DSTF20150CR, 2x10A, 150V, ITO-220AB, Common Anode DSTF20150CR RoHS Pb Pin out 1 2 3 Cathode Anode Cathode Maximum R

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Data Sheet FEATURES Qualified for automotive applications FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth (G

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STB18NM80, STF18NM80, STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω , 17 A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datashe

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STF3NK80Z Datasheet N-channel 800 V, 3.6 Ω typ., 2.5 A SuperMESH Power MOSFET in a TO-220FP package Features 3 2 1 TO-220FP D(2) Order code VDS S

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Schottky Barrier Rectifier DSTF30100S, 30A, 100V, ITO-220AB, Single DSTF30100S RoHS Pb Description Littelfuse DST series Ultra Low VF Schottky Barr

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www.DataSheet4U.com THIN FILM CHIP RESISTORS MSTF 2 SERIES MECHANICAL DA TA DAT SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS BACKSIDE SURFACE 0.020

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Data Sheet FEATURES Qualified for automotive applications FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth (G

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isc N-Channel MOSFET Transistor STF6N90K5 FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On

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STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mΩ typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK,

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STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Fea

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STF40NF06 N-channel 60V - 0.024Ω - 23A - TO-220FP STripFET™ II Power MOSFET General features Type STF40NF06 ■ ■ ■ ■ VDSS 60V RDS(on) <0.028Ω ID 23A

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STFW3N150 STP3N150, STW3N150 N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF Features Type STFW3N150 STP3N150 STW3N150

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STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Fea

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STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDme

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www.DataSheet4U.com THIN FILM CHIP RESISTORS MSTF 2 SERIES MECHANICAL DA TA DAT SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS BACKSIDE SURFACE 0.020

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COMMON MODE CHOKE 1. PART NO. EXPRESSION : STF0402 SERIES STF0402100YZF (a) (b) (c) (d)(e)(f) (a) Series code (b) Dimension code (c) Inductance cod

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FEATURES ► High speed ► −3 dB bandwidth (G = 1, RL = 100 Ω): 1050 MHz ► Slew rate: 870 V/µs ► 0.1% settling time: 9 ns ► Input bias current: 2 pA typi

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STF12N50DM2 N-channel 500 V, 0.299 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data 3 2 1 TO-220FP Figure 1:

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STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 Ω typ., 6 A MDmesh™ K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - pro

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