.
Silan
40N60NPFD - 600V FIELD STOP IGBT
SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu.
Silan Microelectronics
60N60FD1 - 600V FIELD-STOP IGBT
Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog.
TRinno
TGAN40N60F2DS - Field Stop Trench IGBT
Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel.
TRinno
TGAN20N135FD - Field Stop Trench IGBT
Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
UTC
UTG40N120FQ-S - 1200V TRENCH GATE FIELD-STOP IGBT
UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT DESCRIPTION The UTC UTG40N120FQ.
Sanken
FGF65A3L - Trench Field Stop IGBT
VCE = 650 V, IC = 30 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A3L, MGF65A3L, FGF65A3L Data Sheet Description Package KGF65A3L, MGF6.
UTC
UTG28N65-S - 650V TRENCH GATE FIELD-STOP IGBT
UNISONIC TECHNOLOGIES CO., LTD UTG28N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT 1 DESCRIPTION The UTC.
Sanken
MGF65A4H - Trench Field Stop IGBT
VCE = 650 V, IC = 40 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A4H, MGF65A4H, FGF65A4H Data Sheet Description Packages The KGF65A4H,.
MagnaChip
MBQ60T65PES - High Speed Fieldstop Trench IGBT
MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th.
TRinno
TGAN40N60FD - Field Stop Trench IGBT
Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation.
Fairchild Semiconductor
FGH40N60SFD - 40A Field Stop IGBT
FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Vo.
ON Semiconductor
NCV8878 - Automotive Grade Start-Stop Non-Synchronous Boost Controller
Automotive Grade Start-Stop Non-Synchronous Boost Controller NCV8878 The NCV8878 is a Non-Synchronous Boost controller designed to supply a minimum o.
STMicroelectronics
STGB30H60DF - 30A high speed trench gate field-stop IGBT
TAB 3 1 D²PAK TAB STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data .
UTC
UTG40N65-S - 650V TRENCH GATE FIELD-STOP IGBT
UNISONIC TECHNOLOGIES CO., LTD UTG40N65-S Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT DESCRIPTION The UTC UTG40N65-S is a.
UTC
UTG10N65-S - 650V TRENCH GATE FIELD-STOP IGBT
UNISONIC TECHNOLOGIES CO., LTD UTG10N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT DESCRIPTION The UTC UT.
UTC
UTG4N65-S - 650V TRENCH GATE FIELD-STOP IGBT
UNISONIC TECHNOLOGIES CO., LTD UTG4N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT DESCRIPTION The UTC UTG.
Sanken
FGF65A3L6L - Trench Field Stop IGBT
VCE = 650 V, IC = 15 A Trench Field Stop IGBTs with Fast Recovery Diode FGF65A3L6L Data Sheet Description FGF65A3L6L is 650 V / 15 A Field Stop IGBT.
STMicroelectronics
GW60V60DF - Trench gate field-stop IGBT
STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data 3 2 1 TO-247 TAB.
Sanken
FGF65A3H - Trench Field Stop IGBT
VCE = 650 V, IC = 30 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A3H, MGF65A3H, FGF65A3H Data Sheet Description Packages The KGF65A3H,.
Sanken
FGF65A4H - Trench Field Stop IGBT
VCE = 650 V, IC = 40 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A4H, MGF65A4H, FGF65A4H Data Sheet Description Packages The KGF65A4H,.