| No |
Part Number |
Description |
Manufacture |
PDF |
| 179 |
STP100N10F7 |
N-channel Power MOSFET
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7
N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET™ VII DeepGATE™
2
Power MOSFET in D PAK, DPAK, TO-220FP and TO-220
Datasheet - production data
TA |
STMicroelectronics
|
|
| 178 |
STP100N8F6 |
N-channel Power MOSFET
STP100N8F6
N-channel 80 V, 0.008 Ω typ., 100 A, STripFET™ F6
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code VDS STP100N8F6 |
STMicroelectronics
|
|
| 177 |
STP100NF03L-03 |
N-channel Power MOSFET
STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1
N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220 STripFET™ III Power MOSFET
General features
Type STB100NF03L-03 STB100NF03L-03- |
ST Microelectronics
|
|
| 176 |
STP100NF04 |
N-channel Power MOSFET
STP100NF04 STB100NF04
N-channel 40V - 0.0043Ω - 120A - TO-220 - D2PAK STripFET™ II Power MOSFET
General features
Type STP100NF04 STB100NF04
â– â–
VDSS 40V 40V
RDS(on) < 0. |
ST Microelectronics
|
|
| 175 |
STP100NF04L |
N-channel Power MOSFET
|
ST Microelectronics
|
|
| 174 |
STP1012 |
32-Bit Microprocessor
|
Sun Microsystems
|
|
| 173 |
STP1013 |
Dual P Channel Enhancement Mode MOSFET
STP1013
Dual P Channel Enhancement Mode MOSFET
-0.45A
DESCRIPTION STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
Stanson Technology
|
|
| 172 |
STP1030 |
High-Performance 64-Bit RISC Processor
SPARC Technology
Business
Preliminary
STP1030
May 1995
DATA SHEET
UltraSPARC-I
High-Performance 64-Bit RISC Processor
INTRODUCTION
The STP1030, UltraSPARC-I, is a high-performance, highly-integrat |
SPARC
|
|
| 171 |
STP105N3LL |
N-channel Power MOSFET
STP105N3LL
N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ VI DeepGATE™
Power MOSFET in a TO-220 package
Datasheet − production data
Features
TAB
3 2 1
TO-220
Order code STP105N3LL
VDS 30 V
|
STMicroelectronics
|
|
| 170 |
STP10LN80K5 |
N-channel Power MOSFET
STP10LN80K5
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code STP10LN80K5
VDS 80 |
STMicroelectronics
|
|
| 169 |
STP10N03 |
N-Channel Enhancement Mode Field Effect Transistor
STP10N03Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V
120A
4.0 @ VGS=10V
|
SamHop Microelectronics
|
|
| 168 |
STP10N10L |
N-Channel Enhancement Mode Low Threshold Power MOS Transistor
( DataSheet : )
|
ST Microelectronics
|
|
