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STQ Matched Datasheet



Part Number Description Manufacture
STQ2016-3
700-2500 MHz Direct Quadrature Modulator
a 700-2500 MHz operating frequency band, excellent carrier and sideband suppression, and a low broadband noise floor. The STQ-2016-3 uses silicon germanium (SiGe) device technology and delivers a typical channel power of -11 dBm with adjacent channel
Manufacture
ETC
STQ3NK50ZR-AP
N-CHANNEL MOSFET
TYPE STQ3NK50ZR-AP STD3NK50Z STD3NK50Z-1 s s s s s s Figure 1: Package RDS(on) 3.5 Ω 3.5 Ω 3.5 Ω ID 0.5 A 2.3 A 2.3 A Pw 3W 45 W 40 W VDSS 500 V 500 V 500 V 3 1 TYPICAL RDS(on) = 3.0 Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY) 100%
Manufacture
ST Microelectronics
STQ-2016-3
700-2500 MHz Direct Quadrature Modulator
a 700-2500 MHz operating frequency band, excellent carrier and sideband suppression, and a low broadband noise floor. The STQ-2016-3 uses silicon germanium (SiGe) device technology and delivers a typical channel power of -11 dBm with adjacent channel
Manufacture
ETC
STQ1NE10L
N-CHANNEL MOSFET
Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC
Manufacture
ST Microelectronics
STQ1HN60K3-AP
N-CHANNEL MOSFET
Order code VDS STQ1HN60K3-AP 600 V RDS(on) max 8Ω ID PTOT 0.4 A 3 W
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery characteristics
• Zener-pro
Manufacture
STMicroelectronics
STQ1016
250 - 1000 MHz Direct Quadrature Modulator
a wide 250 - 1000 MHz operating frequency band, excellent carrier and sideband suppression, and a low broadband noise floor. The STQ-1016 uses silicon germanium (SiGe) device technology and delivers a typical output power of -9 dBm with greater than
Manufacture
ETC
STQ1NC45
N-CHANNEL MOSFET
AP MARKING D2NC45 Q1NC45 Q1NC45 PACKAGE IPAK TO-92 TO-92 PACKAGING TUBE BULK AMMOPAK www.DataSheet4U.com June 2003 1/11 www.DataSheet4U.com STD2NC45-1, STQ1NC45 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tj Tstg Par
Manufacture
ST Microelectronics
STQ1NK60ZR
N-CHANNEL MOSFET
4 3 2 1 SOT-223 TO-92 (Ammopak) Figure 1. Internal schematic diagram D(2,4) G(1) S(3) AM01476v1 Order codes VDS RDS(on)max ID PTOT STN1NK60Z 600 V STQ1NK60ZR-AP 15 Ω 3.3 W 0.3 A 3W
• 100% avalanche tested
• Extremely high dv/dt capability
Manufacture
ST Microelectronics
STQ-2016
700 MHz to 2500 MHz DIRECT QUADRATURE MODULATOR
a wide 700 MHz to 2500 MHz operating frequency band, excellent carrier and sideband suppression, and a low broadband noise floor. The STQ-2016 uses silicon germanium (SiGe) device technology and delivers a typical output power of -11 dBm with typical
Manufacture
RFMD
STQ2016Z
700 MHz to 2500 MHz DIRECT QUADRATURE MODULATOR
a wide 700 MHz to 2500 MHz operating frequency band, excellent carrier and sideband suppression, and a low broadband noise floor. The STQ-2016 uses silicon germanium (SiGe) device technology and delivers a typical output power of -11 dBm with typical
Manufacture
RFMD

Total 41 results






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