w w w . D a t a S h e e t . c o . .
SEMIPOWER
SW4N60D - MOSFET
SAMWIN SW4N60D N-channel TO-220F/I-PAKN/D-PAK MOSFET Features TO-220F TO-251N TO-252 ■ High ruggedness ■ RDS(ON) (Max 2.2Ω)@VGS=10V ■ Gate Charge.
SEMIPOWER
SW4N60K - N-Channel MOSFET
SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features High ruggedness Low RDS(ON) (Typ 1Ω)@VGS=10V Low Gate Charge (Typ 13nC) .
Fairchild Semiconductor
SSW4N60B - 600V N-Channel MOSFET
SSW4N60B / SSI4N60B November 2001 SSW4N60B / SSI4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .
Samwin
SW4N60 - N-Channel MOSFET
w w w . D a t a S h e e t . c o . k r SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg .
Samwin
SW4N60A - N-Channel MOSFET
www.DataSheet.co.kr SAMWIN SW4N60A N-channel MOSFET BVDSS : 600V ID : 4.0A RDS(ON) : 2.2ohm 1 2 1 3 2 2 Features ■ High ruggedness ■ RDS(ON) (Max 2.
Samwin
SW4N60V - N-Channel MOSFET
www.DataSheet.co.kr SAMWIN SW4N60V N-channel MOSFET BVDSS : 600V ID : 4.0A RDS(ON) : 2.5ohm 1 2 2 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@.
SEMIPOWER
SW4N60B - N-channel I-PAK/D-PAK/TO-220F MOSFET
SAMWIN TO-251 TO-252 TO-220F SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET BVDSS : 600V ID 1 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V.
