Silicon Power Microelectronics Datasheet | Specifications & PDF Download

PRELIMINARY VERSION nly R820T O High Performance Low Power Advanced Digital TV Silicon Tuner Datasheet orSuite 808, Building 53, No.195, Sec.4, Chung

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TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

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Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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Silicon N-Channel Power MOSFET CS13J65 A0-G ○R General Description： CS13J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

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® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL

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Silicon N-Channel Power MOSFET CS1N80 A1H ○R General Description： CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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Silicon N-Channel Power MOSFET ○R CS3710 B8 General Description： CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-align

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www.DataSheet4U.com TIP41CN TIP42CN COMPLEMENTARY SILICON POWER TRANSISTORS PRELIMINARY DATA n n n n n COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SE

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® BD909/911 BD910/912 COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silico

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www.DataSheet4U.com TIP41CN TIP42CN COMPLEMENTARY SILICON POWER TRANSISTORS PRELIMINARY DATA n n n n n COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SE

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SCT1000N170 Datasheet Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package HiP247 3 2 1 D(2, TAB) G(1) S(3) AM01475v1_noZen

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SCT040H120G3-7 Datasheet Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver sou

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2N3771 ® 2N3772 HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-bas

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Silicon N-Channel Power MOSFET CS12N65 A8H ○R General Description： CS12N65 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET CS10N65F A9R ○R General Description： CS10N65F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

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Silicon N-Channel Power MOSFET CS220N04 A8H ○R General Description： CS220N04 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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Silicon N-Channel Power MOSFET CS7N65 A4R ○R General Description： CS7N65 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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