Silicon Power Microelectronics Datasheet | Specifications & PDF Download

PRELIMINARY VERSION nly R820T O High Performance Low Power Advanced Digital TV Silicon Tuner Datasheet orSuite 808, Building 53, No.195, Sec.4, Chung

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Silicon N-Channel Power MOSFET CS13J65 A0-G ○R General Description： CS13J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

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Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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TIP142, TIP147 Complementary power Darlington transistors Features ■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter

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Silicon N-Channel Power MOSFET CS13N50 A8R ○R General Description： CS13N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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Silicon N-Channel Power MOSFET CS4N60 A7HD ○R General Description： CS4N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET CS4N60 A8HD ○R General Description： CS4N60 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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Silicon N-Channel Power MOSFET CS6N90 A8H ○R General Description： CS6N90 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET CS50N20 ANH ○R General Description： CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL

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Silicon N-Channel Power MOSFET CS4N60 A4HD ○R General Description： CS4N60 A4HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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TIP142, TIP147 Complementary power Darlington transistors Features ■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter

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Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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Silicon N-Channel Power MOSFET CS1N80 A1H ○R General Description： CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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Silicon N-Channel Power MOSFET ○R CS9N90 ANHD General Description： CS9N90 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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SCT020HU120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HU3PAK package TAB Gate (1) Driver source (

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TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

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Silicon N-Channel Power MOSFET HPU650R1K9DN ○R General Description： HPU650R1K9DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET HPU650R2K8DN ○R General Description： HPU650R2K8DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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