Silicon Power Microelectronics Datasheet | Specifications & PDF Download

PRELIMINARY VERSION nly R820T O High Performance Low Power Advanced Digital TV Silicon Tuner Datasheet orSuite 808, Building 53, No.195, Sec.4, Chung

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Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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Silicon N-Channel Power MOSFET CS13J65 A0-G ○R General Description： CS13J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

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Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL

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Silicon N-Channel Power MOSFET CS13N50 A8R ○R General Description： CS13N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET CS1N80 A1H ○R General Description： CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

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Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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Silicon N-Channel Power MOSFET CS100N03 B4 ○R General Description： CS100N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET ○R CS1404 A8 General Description： CS1404 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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Silicon N-Channel Power MOSFET CS50N20 ANH ○R General Description： CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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TIP142, TIP147 Complementary power Darlington transistors Features ■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter

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® BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DE

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Silicon N-Channel Power MOSFET CS7N60 A4R ○R General Description： CS7N60 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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® BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN po

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MJE340 MJE350 Complementary silicon power transistors Features ■ STMicroelectronics preferred salestypes ■ Complementary NPN - PNP devices Applicatio

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Silicon N-Channel Power MOSFET CS10J65 A4 ○R General Description： CS10J65 A4, the silicon N-channel Enhanced MOSFETs, is obtained by the super junct

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Silicon N-Channel Power MOSFET CS13N50 A8H ○R General Description： VDSS 500 V CS13N50 A8H, the silicon N-channel Enhanced ID 13 A VDMOSFETs, i

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Silicon N-Channel Power MOSFET ○R CS9N90 ANHD General Description： CS9N90 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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