TFB-3 Datasheet | Specifications & PDF Download

Data Travo Flyback BSC25-N0211 Tampak Bawah Skema Koneksi No. Pin Fungsi 1 2 H B+110 3 4 H1 AFC Digunakan Pada TV : China Brand Persamaan :

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NIKO-SEM N-Channel Enhancement Mode P1525ETFB Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V

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NIKO-SEM N-Channel Enhancement Mode P1120ETFB Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V

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P1525ETFB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 250V 260mΩ @VGS = 10V 15A TO-220F ABSOLUTE MAXIMUM RATINGS (T

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NIKO-SEM N-Channel Enhancement Mode P1820HTFB Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V

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512Mb, 1Gb, 2Gb: P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BF

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P1825HTFB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 250V 230mΩ @VGS = 10V 18A TO-220F ABSOLUTE MAXIMUM RATINGS (T

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Filter Coils < Pin Type: TFB Series> Type: ¡ô TFB-2LDG Product Description •E18.2¡Á 9.7mm Max.(L¡Á W), 9.5mm Max. Height. •EOperating frequency:10~

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P1120ETFB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200V 280mΩ @VGS = 10V 11A TO-220F ABSOLUTE MAXIMUM RATINGS (T

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P1820HTFB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200V 150mΩ @VGS = 10V 18A TO-220F ABSOLUTE MAXIMUM RATINGS (T

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NIKO-SEM N-Channel Enhancement Mode P1825HTFB Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V

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PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally

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Filter Coils < Pin Type: TFB Series> Type: •Ÿ TFB-3D Product Description •E 26.7¡Á 9.7mm Max.(L¡Á W), 12.5mm Max. Height. •E Operating frequency:10

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Data Travo Flyback TFB4122BD Tampak Bawah Skema Koneksi No. Pin 1 2 Fungsi H B+115 3 4 5 67 8 9 10 185 GND NC 26 12 ABL HT AFT Digunakan Pa

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PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended f

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PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-w

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PTFB201402FC High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs in

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Datasheet Values Refer to PCN-OPT-1233-2022 www.vishay.com TFBS4652 Vishay Semiconductors Infrared Transceiver, 9.6 kbit/s to 115.2 kbit/s (SIR) fo

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TFBR Stainless Steel Power Resistors The TFBR series provides high power density in a low profile package. Designed for easy assembly and supplied wit

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PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in

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