TG-65 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD UTG10N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UT

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MOSEL VITELIC V436516Y04V 128MB 144-PIN UNBUFFERED SDRAM SODIMM, 16MX64 3.3VOLT PRELIMINARY Features s JEDEC-standard 144 pin, Small-Outline, Dual

Rating: 1 ★ (7 votes)

UNISONIC TECHNOLOGIES CO., LTD UTG40N65-S Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N65-S is a

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UNISONIC TECHNOLOGIES CO., LTD UTG28N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT 1  DESCRIPTION The UTC

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UNISONIC TECHNOLOGIES CO., LTD UTG4N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG

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LCF Series Common Mode Noise Filter LCF Series Pinout Two Lines Pin1 Pin2 Item Rdc CM Impedance Four Lines Pin3 Pin4 Description Pin 1-3, 2-4

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LCF Series Common Mode Noise Filter LCF Series Pinout Two Lines Pin1 Pin2 Item Rdc CM Impedance Four Lines Pin3 Pin4 Description Pin 1-3, 2-4

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MOSEL VITELIC V43658R04V 3.3 VOLT 8M x 64 UNBUFFERED SDRAM MODULE PRELIMINARY Features ■ 168 Pin Unbuffered 8,388,608 x 64 bit Oganization SDRAM DI

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STGB30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a D2PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Int

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STG200G65FD8AG Datasheet Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing C Features G E EGCD

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UNISONIC TECHNOLOGIES CO., LTD UTG25N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UT

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TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6585AFTG TB6585AFTG 3-Phase Sine-Wave PWM Driver for BLDC Motors Features TB6585AFTG • Si

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MOSEL VITELIC V436516S04VATG-75 3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE PRELIMINARY Features I 168 Pin Unbuffered 16,777,2

Rating: 1 ★ (5 votes)

MOSEL VITELIC V436516Z04VTG-75 3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM PRELIMINARY Features s Using 16M x 8 SDRAMs s JEDEC-stand

Rating: 1 ★ (5 votes)

MOSEL VITELIC V436532S04VATG-75 3.3 VOLT 32M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE PRELIMINARY Features s 168 Pin Unbuffered 33,554,4

Rating: 1 ★ (5 votes)

MOSEL VITELIC V43658Y04VATG-10PC 3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM Description PRELIMINARY Features s JEDEC-standar

Rating: 1 ★ (5 votes)

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT 3 2 1 TO-247 TAB 3 2 1 TO-247 long

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Product Data Sheet August 5, 2008 Ku Band 2W Packaged Amplifier Key Features • • • • • • • • • Package Dimensions 6.4 x 6.4 x 3.0 mm TGA8658-SG Fre

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TB6585FG/FTG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6585FG, TB6585FTG 3-Phase Sine-Wave PWM Driver for BLDC Motors Features • Sine-w

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TG5511_6511_6521BX(e).book Page 1 Tuesday, June 8, 2010 9:17 AM Operating Instructions Digital Cordless Phone Model No. KX-TG5511BX KX-TG6511BX KX-TG6

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