TG-65 Datasheet | Specifications & PDF Download

STGST200G65DFAG, STGST200G65DTAG Datasheet Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package 4 Features 1 4 23 32 1

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STGWA80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT TO-247 long leads Product status link STGWA80H65DFB Features •

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STGW60V60DF, STGWA60V60DF Datasheet Trench gate field-stop 650 V, 60 A high speed V series IGBT in a TO-247 and TO-247 long leads packages 3 2 1 TO-2

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STGW60V60DF, STGWA60V60DF Datasheet Trench gate field-stop 650 V, 60 A high speed V series IGBT in a TO-247 and TO-247 long leads packages 3 2 1 TO-2

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MOSEL VITELIC V436516R04VATG-75 3.3 VOLT 16M x 64 (using 8M x 16) PC133 UNBUFFERED SDRAM MODULE PRELIMINARY Features s 168 Pin Unbuffered 16, 777,

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MOSEL VITELIC V436516Y04V 128MB 144-PIN UNBUFFERED SDRAM SODIMM, 16MX64 3.3VOLT PRELIMINARY Features s JEDEC-standard 144 pin, Small-Outline, Dual

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MOSEL VITELIC V436516Y04V 128MB 144-PIN UNBUFFERED SDRAM SODIMM, 16MX64 3.3VOLT PRELIMINARY Features s JEDEC-standard 144 pin, Small-Outline, Dual

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NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct

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STGB30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a D2PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Int

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STGWA80H65FBAG Datasheet Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads TO-247 long leads C(2,

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MOSEL VITELIC V436516Z04VTG-75 3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM PRELIMINARY Features s Using 16M x 8 SDRAMs s JEDEC-stand

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TB6552FNG/FTG Toshiba Bi-CD Integrated Circuit Silicon Monolithic TB6552FNG, TB6552FTG DUAL-BRIDGE DRIVER IC FOR DC MOTORS The TB6552FNG/FTG is a dua

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STGW80H65DFB, STGWT80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT 3 2 1 TO-247 TAB TO-3P 3 2 1 Features • Maximu

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STG200G65FD8AG Datasheet Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing C Features G E EGCD

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STGWT40HP65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB TO-3P 3 2 1 Figure 1: Internal schem

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STG200M65F2D8AG Datasheet Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing C Features • AEC-Q101 quali

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STGFW30H65FB, STGW30H65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT 3 2 1 TO-247 1 TO-3PF 3 2 1 G(1) C(2, TAB) E(3

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UNISONIC TECHNOLOGIES CO., LTD UTG10N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UT

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UNISONIC TECHNOLOGIES CO., LTD UTG20N65-S Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG20N65-S is a

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MOSEL VITELIC V436516S04VATG-75 3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE PRELIMINARY Features I 168 Pin Unbuffered 16,777,2

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