logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

UTG20N65-S UTC

UTG20N65-S 650V TRENCH GATE FIELD-STOP IGBT

UTG20N65-S Avg. rating / M : star-13

datasheet Download

UTG20N65-S Datasheet

Features and benefits

* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=20A, VGE=15V (TC =25°C)
• SYMBOL
• ORDERING INFORMATION Or.

Application


• FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=20.

Image gallery

UTG20N65-S UTG20N65-S UTG20N65-S

TAGS
UTG20N65-S
650V
TRENCH
GATE
FIELD-STOP
IGBT
UTG25N120
UTG25N120-G2
UTG25N65-S
UTC
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy