TRENCH Datasheet | Specifications & PDF Download

HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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N-Channel Trench Power MOSFET General Description The D444 combines advanced trench MOSFET technology with a low resistance package to provide extreme

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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IRFZ44 ® Pb Free Plating Product IRFZ44 Pb 45 Ampere Typical N-Channel Trench Power MOSFETs General Description The IRFZ44 is N-channel MOS Fiel

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TGPF30N43P Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th

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SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

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http://www.ncepower.com Pb Free Product NCEP1520K NCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology tha

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MDU1511 – Single N-Channel Trench MOSFET 30V ㅊ MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ General Description The MDU1511 uses advanc

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P-Channel Trench Power MOSFET General Description The CS4459 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operati

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http://www.ncepower.com Pb Free Product NCEP85T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T14 uses Super Trench technology tha

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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Xiner 1350V，25A，Trench-FS IGBT SP25N135T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typ

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MDU1512 – Single N-Channel Trench MOSFET 30V MDU1512 Single N-channel Trench MOSFET 30V, 100.0A, 3.4mΩ General Description The MDU1512 uses advanced

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Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

(79 views)

MDD3752 – P-Channel Trench MOSFET MDD3752 P-Channel Trench MOSFET, -40V, -43A, 17mΩ General Description The MDD3752 uses advanced Magnachip’s Trench

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Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I

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http://www.ncepower.com Pb Free Product NCEP85T16 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T16 uses Super Trench technology tha

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FDD8424H Dual N & P-Channel PowerTrench® MOSFET March 2007 FDD8424H Dual N & P-Channel PowerTrench® MOSFET Features Q1: N-Channel „ Max rDS(on) = 24

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