FIELD-STOP Datasheet | Specifications & PDF Download

SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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STGWA50IH65DF Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package Datasheet - production data Features

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SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

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MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th

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STGB4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diag

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Silan Microelectronics SGT15T60SD1T/F/S_Datasheet 15A, 600V FIELD STOP IGBT DESCRIPTION C 2 The SGT15T60SD1T/F/S field stop III IGBT features lo

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TGPF30N43P Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

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STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Inter

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VCE = 650 V, IC = 30 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A3H, MGF65A3H, FGF65A3H Data Sheet Description Packages The KGF65A3H,

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VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A6H, MGF65A6H Data Sheet Description The KGF65A6H and MGF65A6H are 650

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STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode 3 2 1 TO-247 Figure 1. Internal schematic diagram Datasheet - production

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RGTV00TS65 650V 50A Field Stop Trench IGBT Datasheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 50A 1.5V 276W Features 1) Low Collector - Emitter Sat

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STGB15M65DF2 Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Int

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RGTV80TS65 650V 40A Field Stop Trench IGBT Datasheet VCES IC (100°C) VCE(sat) (Typ.) PD 650V 40A 1.5V 234W lFeatures 1) Low Collector - Emitter S

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RGWX5TS65 650V 75A Field Stop Trench IGBT Datasheet VCES IC (100°C) VCE(sat) (Typ.) PD 650V 75A 1.5V 348W lFeatures 1) Low Collector - Emitter Sa

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RGTV80TS65D 650V 40A Field Stop Trench IGBT Datasheet VCES IC (100°C) VCE(sat) (Typ.) PD 650V 40A 1.5V 234W lOutline TO-247N (1) (2)(3) lFeature

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UNISONIC TECHNOLOGIES CO., LTD UTG40N65-S Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N65-S is a

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UNISONIC TECHNOLOGIES CO., LTD UTG6N60-S Preliminary Insulated Gate Bipolar Transistor 600V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG

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SEMICONDUCTOR TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche rug

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