MGF65A6H Datasheet, Igbt, Sanken

MGF65A6H Features

  • Igbt
  • Low Saturation Voltage
  • High Speed Switching
  • With Integrated Fast Recovery Diode
  • RoHS Compliant
  • VCE

PDF File Details

Part number:

MGF65A6H

Manufacturer:

Sanken ↗

File Size:

636.73kb

Download:

📄 Datasheet

Description:

Trench field stop igbt. The KGF65A6H and MGF65A6H are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves high

Datasheet Preview: MGF65A6H 📥 Download PDF (636.73kb)
Page 2 of MGF65A6H Page 3 of MGF65A6H

MGF65A6H Application

  • Applications
  • Welding Invertor
  • PFC Circuit Packages TO247-3L (4) TO3P-3L (4) (1) (2) (3)

TAGS

MGF65A6H
Trench
Field
Stop
IGBT
Sanken

📁 Related Datasheet

MGF65A3H - Trench Field Stop IGBT (Sanken)
VCE = 650 V, IC = 30 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A3H, MGF65A3H, FGF65A3H Data Sheet Description Packages The KGF65A3H,.

MGF65A3L - Trench Field Stop IGBT (Sanken)
VCE = 650 V, IC = 30 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A3L, MGF65A3L, FGF65A3L Data Sheet Description Package KGF65A3L, MGF6.

MGF65A4H - Trench Field Stop IGBT (Sanken)
VCE = 650 V, IC = 40 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A4H, MGF65A4H, FGF65A4H Data Sheet Description Packages The KGF65A4H,.

MGF65A4L - Trench Field Stop IGBT (Sanken)
VCE = 650 V, IC = 40 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A4L, MGF65A4L, FGF65A4L Data Sheet Description Package KGF65A4L, MGF6.

MGF0904A - High-power GaAs FET (Mitsubishi)
< High-power GaAs FET (small signal gain stage) > MGF0904A L & S BAND / 0.6W non - matched DESCRIPTION The MGF0904A, GaAs FET with an N-channel schot.

MGF0905A - High-power GaAs FET (Mitsubishi)
< High-power GaAs FET (small signal gain stage) > MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION The MGF0905A, GaAs FET with an N-channel schot.

MGF0906B - High-power GaAs FET (Mitsubishi)
< High-power GaAs FET (small signal gain stage) > MGF0906B L & S BAND / 5W non - matched DESCRIPTION The MGF0906B, GaAs FET with an N-channel schottk.

MGF0907B - High-power GaAs FET (Mitsubishi)
< High-power GaAs FET (small signal gain stage) > MGF0907B L & S BAND /10W non - matched DESCRIPTION The MGF0907B, GaAs FET with an N-channel schottk.

MGF0909A - L /S BAND POWER GaAs FET (Mitsubishi)
MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed .

MGF0910A - High-power GaAs FET (Mitsubishi)
< High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND /6W non - matched DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky.

Stock and price

Sanken Electric Co Ltd
IGBT TRENCH FS 650V 80A TO-3P-3L
DigiKey
MGF65A6H
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts