TH50 Datasheet | Specifications & PDF Download

BTH50015-1LUA Datasheet Power PROFET™ + 24/48V smart high-side power switch Features • PRO-SIL™ ISO 26262-ready for supporting the integrator in eva

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 55mΩ@VGS= -10V ·Fully characterized avalanche voltage and cur

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BTH50030-1LUA Datasheet Power PROFET™ + 24/48V smart high-side power switch Features • PRO-SIL™ ISO 26262-ready for supporting the integrator in eva

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Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH50P10 IXTT50P10 VDSS = ID25 = ≤ RDS(on) - 100V - 50A 55mΩ TO-247 (IXTH) Symb

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www.DataSheet4U.com MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V = 50 A ID25 RDS(on) = 45 mΩ N-Channel Enhancement Mode Symbol VDSS VDGR VGS V

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BTH50060-1LUA Datasheet Power PROFET™ + 24/48V smart high-side power switch Features • PRO-SIL™ ISO 26262-ready for supporting the integrator in eva

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 55mΩ@VGS= -10V ·Fully characterized avalanche voltage and cur

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) ·Fast Swi

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www.DataSheet4U.com Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 50P085 VDSS ID25 RDS(on) = -85 V = -50 A = 55 mΩ Symbo

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Trench Gate Power MOSFET IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T N-Channel Enhancement Mode VDSS = ID25 = RDS(on) ≤ 250V 50A 60mΩ TO-263 AA (

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 45mΩ(Max) ·Fast Swi

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Reference Only Spec. No. JEFL243C-9122-01 P 1/11 Wire Wound Chip Common Mode Choke Coil DLW5ATH□□□MQ2□ Murata Standard Reference Specification [AEC

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Reference Only Spec. No. JEFL243C-9122-01 P 1/11 Wire Wound Chip Common Mode Choke Coil DLW5ATH□□□MQ2□ Murata Standard Reference Specification [AEC

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Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 50N30 IXTT 50N30 VDSS ID25 RDS(on) = 300 V = 50 A = 65 mΩ

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DIN48 MINUTES INDICATOR HOUR METER TH50 Hour Meters 80.5 3.169 48 1.890 48 1.890 Silver panel mm inch Black panel RoHS Directive compatibility i

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Reference Only Spec. No. JEFL243C-9122-01 P 1/11 Wire Wound Chip Common Mode Choke Coil DLW5ATH□□□MQ2□ Murata Standard Reference Specification [AEC

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DIN48 MINUTES INDICATOR HOUR METER TH50 Hour Meters 80.5 3.169 48 1.890 48 1.890 Silver panel mm inch Black panel RoHS Directive compatibility i

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DIN48 MINUTES INDICATOR HOUR METER TH50 Hour Meters 80.5 3.169 48 1.890 48 1.890 Silver panel mm inch Black panel RoHS Directive compatibility i

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TH50VSF2582/2583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The

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CTH5002NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 25V  Drain-Source On-Resistance RDS(ON) 6.5m, at VGS= 10V

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