.
Sanken electric
TM2561B-L - TO-3PF 25A Triac
TO-3PF 25A Triac TM2541B-L, TM2561B-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=25A qGate trigger .
Samsung semiconductor
K4S56163PF-F90 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba.
Sanken electric
TM2541B-L - TO-3PF 25A Triac
TO-3PF 25A Triac TM2541B-L, TM2561B-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=25A qGate trigger .
Samsung semiconductor
K4S56323PF-FHF - 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323PF-F(H)G/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four bank.
ON Semiconductor
NTHD3133PF - Power MOSFET
NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt Features •ăLeadless SMD Pac.
Samsung semiconductor
K4S51163PF-F1L - 8M x 16Bit x 4 Banks Mobile-SDRAM
K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c.
Samsung semiconductor
K4S51163PF-YF - 8M x 16Bit x 4 Banks Mobile-SDRAM
K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c.
Samsung semiconductor
K4S56163PF-F1L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba.
Samsung semiconductor
K4S56163PF-RG - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba.
Sanken electric
TM1262B-R - TO-3PF 12A Triac
TO-3PF 12A Triac TM1262B-R s Features qRepetitive peak off-state voltage: VDRM=600V qRMS on-state current: IT(RMS)=12A qGate trigger current: IGT=8mA.
Sanken electric
TM1641B-L - TO-3PF 16A Triac
TO-3PF 16A Triac TM1641B-L, TM1661B-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=16A qGate trigger .
Sanken electric
TM1661B-L - TO-3PF 16A Triac
TO-3PF 16A Triac TM1641B-L, TM1661B-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=16A qGate trigger .
Toshiba Semiconductor
TMP93PF76F - CMOS 16-Bit Microcontroller
TMP93PF76 CMOS 16-Bit Microcontroller TMP93PF76F 1. Outline and Feature The TMP93PF76F is a system evaluation LSI having a built in One-Time PROM (192.
Siemens Semiconductor Group
SFH203PFA - PIN PHOTODIODE
SFH 203 P SFH 203 PFA Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 P SFH 203 PFA .
Samsung semiconductor
K4S56323PF-FG - 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323PF-F(H)G/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four bank.
Samsung semiconductor
K4S56323PF-FF - 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323PF-F(H)G/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four bank.
Samsung semiconductor
K4S51323PF-MF - 4M x 32Bit x 4 Banks Mobile-SDRAM
K4S51323PF-M(E)F 4M x 32Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c.
Samsung semiconductor
K4S51163PF-F90 - 8M x 16Bit x 4 Banks Mobile-SDRAM
K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c.
Samsung semiconductor
K4S51163PF-Y - 8M x 16Bit x 4 Banks Mobile-SDRAM
K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c.
Samsung semiconductor
K4S56163PF - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba.