TO-3PF Datasheet | Specifications & PDF Download

K4S51323PF-M(E)F 4M x 32Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c

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K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

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TO-3PF 16A Triac TM1641B-L, TM1661B-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=16A qGate trigger

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K4S56323PF-F(H)G/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four bank

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K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

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K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

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K4S56323PF-F(H)G/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four bank

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TMP93PF76 CMOS 16-Bit Microcontroller TMP93PF76F 1. Outline and Feature The TMP93PF76F is a system evaluation LSI having a built in One-Time PROM (192

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NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt Features •ăLeadless SMD Pac

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K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c

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TO-3PF 25A Triac TM2541B-L, TM2561B-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=25A qGate trigger

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TO-3PF 25A Triac TM2541B-L, TM2561B-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=25A qGate trigger

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SFH 203 P SFH 203 PFA Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 P SFH 203 PFA

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K4S51323PF-M(E)F 4M x 32Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c

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K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c

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K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c

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TO-3PF 12A Triac TM1262B-R s Features qRepetitive peak off-state voltage: VDRM=600V qRMS on-state current: IT(RMS)=12A qGate trigger current: IGT=8mA

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∗∗∗∗∗ C-MOS SCSI2 PROTOCOL-CONTROLLER -TOP VIEW MB86603PFV(1/4) IL16 132 130 NC NC 120 GND NC NC NC NC GND VDD (+5V) 110 NC NC NC GND NC 100 NC GND

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K4S56323PF-F(H)G/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four bank

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0.13 0.24 DESCRIPTION RT3PFFM is composite transistor built with two RT1P431 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor e

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