TSF Datasheet | Specifications & PDF Download

TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology

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TSF65R190S1 650V 20A N-Channel SJ-MOSFET TSF65R190S1 650V 20A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high volt

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TSF65R300S1 650V 15A N-Channel SJ-MOSFET TSF65R300S1 650V 15A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high volt

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TSF10N60C ® TSF10N60C Pb Free Plating Product Pb 10.3A,600V Insulated N-Channel Type Power MOSFET Features ■ RDS(on) (Max 0.75 Ω )@VGS=10V ■ Gate

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TSF10N80M TSF10N80M 800V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

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5A Avg. 400 Volts FRED TSF05A40-11A INSTANTANEOUS FORWARD CURRENT (A) 50 20 10 5 2 1 0.5 0 FORWARD CURRENT VS. VOLTAGE TSF05A40-11A 0˚ 180˚ θ CO

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TSP840M / TSF840M 500V N-Channel MOSFET General Description This Pow er MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology.

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TSP12N65M / TSF12N65M 650V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology

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page 1 2 3 E251 sheet 20 21 FP date ±1925 ±1925 2000.02.26

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M Litton Kester Solder TSF-6522 No-Clean Tacky Soldering Flux Product Description Kester formula TSF-6522 is a no-clean tacky soldering flux formul

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creat by AR TSF30H100C thru TSF30H200C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent hi

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TSF10U60C Taiwan Semiconductor FEATURES - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forwar

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TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temp

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TSF10H100C thru TSF10H200C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature

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TSP8N60M/TSF8N60M 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 10

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Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss

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TSF20L100C thru TSF20L200C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature

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TSF20L100C thru TSF20L200C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature

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 Product Introduction Token Saw Filters (TSF) Make New Waves in The Wireless World. With the growth of wireless communications, surface acoustic wave

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TSP2N70M/TSF2N70M TSP2N70M/TSF2N70M 700V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe

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