U311 Datasheet | Specifications & PDF Download

Advance Information DS-TMU3112MS_E USB Full Speed Controller TMU3112MS USB Full Speed Controller (Preliminary) Data Sheet tenx reserves the right t

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776_CU (1/1) www.DataSheet4U.com RF Components Circulators/Isolators Hexalators Hexalator is TDK trade name for a non-reciprocal device composed of m

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n-channel JFET designed for • • • • VHF Amplifiers • Oscillators • Mixers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage

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Advance Information DS-TMU3113MS_E USB Full Speed controller TMU3113MS USB Full Speed Controller Data Sheet tenx reserves the right to change or di

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www.DataSheet4U.com PD - 97175A AUTOMOTIVE MOSFET IRLR3110ZPbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating T

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Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T

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TMU3112 USB Full Speed Controller (Preliminary) DATA SHEET Rev 1.3 tenx reserves the right to change or discontinue the manual and online documentatio

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InterFET Product Folder Technical Support Order Now U311 U311 N-Channel JFET Features • InterFET N0072L Geometry • Low Noise: 2 nV/√Hz Typical •

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Advance Information DS-TMU3114MS_E USB Full Speed Controller TMU3114MS USB Full Speed Controller Data Sheet tenx reserves the right to change or di

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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Advance Information TMU3111 USB Full Speed Controller Data Sheet Tenx reserves the right to change or discontinue this product without notice. tenx

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AUTOMOTIVE GRADE PD - 96369 AUIRLR3110Z AUIRLU3110Z Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temp

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HSU3119 P-Ch 30V Fast Switching MOSFETs Description The HSU3119 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gat

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  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive  175°C Operating Temperature  Fast Swi

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Power Transistor Arrays PUA3117 (PU3117) Silicon NPN triple diffusion planar type For power amplification and switching 20.2±0.3 Unit: mm 4.0±0.2 ■

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AUTOMOTIVE GRADE PD - 96381 AUIRLR3114Z AUIRLU3114Z HEXFET® Power MOSFET Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C O

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www.DataSheet.co.kr HDSP-U1xx Series 8 mm (0.31 inch) Ultra Mini Seven Segment Displays Data Sheet HDSP-U1xx/U2xx/U3xx/U4xx/U5xx Series Description

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FEATURES ►SIP Package with Industry Standard Pinout ►Package Dimension: 19.5 x 10.2 x 7.6 mm (0.77”x 0.4”x 0.3”) ►Single and Dual Output Models ►I/O-I

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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www.DataSheet.co.kr 8 mm (0.31 inch) Ultra Mini Seven Segment Displays Technical Data HDSP-U1xx Series HDSP-U2xx Series HDSP-U3xx Series HDSP-U4xx S

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