Vanguard Semiconductor Datasheet | Specifications & PDF Download

Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Test

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VS2301BC-A -20V/-3A P-Channel Advanced Power MOSFET Features  P-Channel  Enhancement mode  Fast Switching  Pb-free lead plating; RoHS compliant;

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5V  100% Avalanche test  Pb-free lead platin

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128Mb Synchronous DRAM P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT) P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT) P2V28S40ATP-7,-75

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Features  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VS4110AT-Y 100V/

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Features  P-Channel，-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  Pb-free lead plating; RoHS

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested 

(31 views)

128Mb Synchronous DRAM P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT) P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT) P2V28S40ATP-7,-75

(31 views)

128Mb Synchronous DRAM P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT) P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT) P2V28S40ATP-7,-75

(31 views)

128Mb Synchronous DRAM P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT) P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT) P2V28S40ATP-7,-75

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Features  N-Channel  Enhancement mode  Very low on-resistance @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compl

(30 views)

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested 

(29 views)

MBR20100CT/MBR30100CT/MBR20150CT/MBR20200CT VSD20100A/VSD30100A/VSD20150A/VSD20200A 20A-30A,100V~200V SCHOTTKY BARRIER RECTIFIERS Features ♦Low Power

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128Mb Synchronous DRAM P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT) P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT) P2V28S40ATP-7,-75

(28 views)

128Mb Synchronous DRAM P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT) P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT) P2V28S40ATP-7,-75

(28 views)

128Mb Synchronous DRAM P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT) P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT) P2V28S40ATP-7,-75

(27 views)

128Mb Synchronous DRAM P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT) P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT) P2V28S40ATP-7,-75

(26 views)

128Mb Synchronous DRAM P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT) P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT) P2V28S40ATP-7,-75

(25 views)

VS3060AD 30V/60A N-Channel Advanced Power MOSFET Features ♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed up

(24 views)

128Mb Synchronous DRAM P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT) P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT) P2V28S40ATP-7,-75

(24 views)