Will Semiconductor Datasheet | Specifications & PDF Download

WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) 20 Typical Rds(on) (Ω) 0.016@ VGS=4.5V 0.018@ VGS=3.1V 0.020@ VGS=2.5V Descriptions The W

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WNMD2173 WNMD2173 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (mΩ) 26@ VGS=4.5V 27@ VGS=4.0V 20 30@ VGS=3.1V

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WNM12N65/WNM12N65F 650V N-Channel MOSFET Description The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high v

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WL2803D Ultra low dropout, 800mA, CMOS LDO WL2803D Http://www.sh-willsemi.com Descriptions The WL2803D series are ultra low dropout, Low quiescent c

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WL2003E WL2003E 300mA, Low noise, High PSRRˈRF LDO Http://www.willsemi.com Descriptions The WL2003E series are 300mA low dropout linear regulators a

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WPT2E33 Single, PNP, -30V, -3A, Power Transistor Descriptions The WPT2E33 is PNP bipolar power transistor with very low saturation voltage. This devic

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WNM6001 Single N-Channel, 60V, 0.50A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions The WNM6

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WNM07N65/WNM07N65F 650V N-Channel MOSFET Description The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high v

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WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V Descriptions The WNM2024

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WNM2030 WNM2030 Single N-Channel, 20V, 0.95A, Power MOSFET Http://www.sh-willsemi.com VDS (V) 20 Rds(on) (ȍ) 0.210@ VGS=4.5V 0.250@ VGS=2.5V 0.30

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WNM07N65/WNM07N65F 650V N-Channel MOSFET Description The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high v

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WD3124DB 1000mA Buck/Boost Charge Pump Flash LED Driver WD3124DB Http//:www.sh-willsemi.com Description The WD3124DB is a current-regulated charge p

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WNMD2165 Dual N-Channel, 60V, 0.32A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions The WNMD2

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WNMD2154 Dual N-Channel, 20V, 0.88A, Small Signal MOSFET VDS (V) 20 Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V Descriptions The W

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WNMD2160 Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.0157@ VGS=4.5V 0.018@ VGS=3.1V 20 0.020@ VGS=2.5V ESD Rating: 2000V HBM

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WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) 20 Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V WNM2020 Http//:www.wills

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WL2801E Low noise, High PSRR, High speed, CMOS LDO Descriptions The WL2801E series is a high accuracy, low noise, high speed, low dropout CMOS Linea

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WNMD2174 Dual N-Channel, 12V, 6A, Power MOSFET Vsss (V) Typ Rss(on) (mΩ) 19@ VGS=4.5V 20@ VGS=4.0V 12 22@ VGS=3.1V 25@ VGS=2.5V ESD Rating:2000

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WPM1483 Single P-Channel, -12V, -3.5A, Power MOSFET VDS (V) -12 Typical Rds(on) (Ω) 0.031@ VGS=–4.5V 0.040@ VGS=–2.5V 0.056@ VGS=–1.8V Description

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WNMD2166 Dual N-Channel, 20V, 4.0A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.022@ VGS=4.5V 0.024@ VGS=3.1V 0.027@ VGS=2.5V ID (A) 4.0 2.5 2.0 WNMD21

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