Will Semiconductor Datasheet | Specifications & PDF Download

WL2003E WL2003E 300mA, Low noise, High PSRRˈRF LDO Http://www.willsemi.com Descriptions The WL2003E series are 300mA low dropout linear regulators a

(4 views)

WNM6001 Single N-Channel, 60V, 0.50A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions The WNM6

(2 views)

WSB5503W Middle Power Schottky Barrier Diode Features  1A Average rectified forward current  Low forward voltage  Low leakage current  Small packa

(2 views)

WNM12N65/WNM12N65F 650V N-Channel MOSFET Description The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high v

(2 views)

WNM2016 N-Channel, 20V, 3.2A, Power MOSFET WNM2016 Http://www.willsemi.com V(BR)DSS 20 Rds(on) 40 @ 4.5V 47 @ 2.5V 55 @ 1.8V Descriptions The WNM2

(2 views)

WNM2021 WNM2021 N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) 20 Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V ID (A) 0.55 0.45 0.3

(2 views)

WL2803D Ultra low dropout, 800mA, CMOS LDO WL2803D Http://www.sh-willsemi.com Descriptions The WL2803D series are ultra low dropout, Low quiescent c

(2 views)

WL2801E Low noise, High PSRR, High speed, CMOS LDO Descriptions The WL2801E series is a high accuracy, low noise, high speed, low dropout CMOS Linea

(2 views)

WL2803E Ultra low dropout, 500mA, CMOS LDO WL2803E Http://www.sh-willsemi.com Descriptions The WL2803E series are ultra low dropout, Low quiescent c

(2 views)

WS3222D Over-Voltage-Protection Load Switch with Adjustable OVLO threshold WS3222D Http//:www.willsemi.com Descriptions The WS3222 is an Over-Voltag

(2 views)

WNMD2174 Dual N-Channel, 12V, 6A, Power MOSFET Vsss (V) Typ Rss(on) (mΩ) 19@ VGS=4.5V 20@ VGS=4.0V 12 22@ VGS=3.1V 25@ VGS=2.5V ESD Rating:2000

(1 views)

WNMD2179 WNMD2179 Dual N-Channel, 20V, 6.3A, Power MOSFET www.sh-willsemi.com VDS (V) Rds(on) (ȍ) 0.0175@ VGS=4.5V 0.0195@ VGS=3.1V 20 0.0215@

(1 views)

WNMD3014 Dual N-Channel, 30V, 6.8A, Power MOSFET VDS (V) 30 Rds(on) (ȍ) 0.023@ VGS=10V 0.033@ VGS=4.5V WNMD3014 Http//:www.willsemi.com Descripti

(1 views)

WNMD6003 Dual N-Channel, 60V, 0.30A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions The WNMD6

(1 views)

WPM1480 WPM1480 Single P-Channel, -20 V, -1.5 A,Power Mosfet Description The WPM1480 uses advanced trench technology and design to provide excellent

(1 views)

WPM1483 Single P-Channel, -12V, -3.5A, Power MOSFET VDS (V) -12 Typical Rds(on) (Ω) 0.031@ VGS=–4.5V 0.040@ VGS=–2.5V 0.056@ VGS=–1.8V Description

(1 views)

WNM07N60/WNM07N60F 600V N-Channel MOSFET Description The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high v

(1 views)

WNM07N65/WNM07N65F 650V N-Channel MOSFET Description The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high v

(1 views)

WNMD2162 WNMD2162 Dual N-Channel, 20V, 4.8A, Power MOSFET VDS (V) 20 ESD Protected Descriptions Rds(on) (Ω) 0.016@ VGS=4.5V 0.019@ VGS=3.1V 0.022@

(1 views)

WNMD2162A Dual N-Channel, 20V, 4.8A, Power MOSFET VDS (V) 20 ESD Protected Descriptions Rds(on) (Ω) 0.014@ VGS=4.5V 0.015@ VGS=3.1V 0.016@ VGS=2.5V

(1 views)