Zetex Semiconductors Datasheet | Specifications & PDF Download

www.DataSheet4U.com Package information - SOT23-5 Surface mounted, 5 pin package Package outline DIM A A1 A2 b C D E E1 e e1 L a° Min. 0.90 0.00 0.9

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SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 4 – MARCH 2000 PARTMARKING DETAILS FMMT3905 - 2W FMMT3906 - 2A FMMT3905 - FMMT3903 FMMT3906 - FMM

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830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes

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830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes

Rating: 1 ★ (5 votes)

FSD270 SILICON DUAL VARIABLE CAPACITANCE DIODE SUMMARY VBR=25V; IR=20nA; Cd=33pF(Nom) DESCRIPTION The FSD270 is a new hyperabrupt SOT23 packaged dual

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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 4 – APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold PARTMARKING DETAIL – SAA BSS123A S D

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SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp PARTMARKING DET

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SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 4 – FEBRUARY 1997 7 FMMT4400 FMMT4401 C B E PARTMARKING DETAILS: FMMT4400 - 1KZ FMMT4401

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SM-8 DUAL N-CHANNEL ENHANCEMENT MODE AVALANCHE RATED MOSFET ISSUE 1 - NOVEMBER 1995 ZDM4206N D1 D1 D2 D2 PARTMARKING DETAIL – M4206N G1 S1 G2 S2 SM

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SM-8 BIPOLAR TRANSISTOR H-BRIDGE PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements

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ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forw

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ZHCS350 SOD523 40V LOW VF SCHOTTKY BARRIER DIODE SUMMARY VR = 40V; IFAV = 510mA; VF = 405mV typ @ 100mA; IR = 7µA typ @ 30V DESCRIPTION Packaged in t

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Current Sensor ZMC10 package : modified DIL-14 1, 2, 7: not connected 3: +VO 4: -VB 5: -VO 6: +VB 8, 9, 10: current output 11, 12, 13: current input

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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 90 Volt VDS * Low input capacitance * Fast switching ZVN1409A D G S E-L

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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=2Ω ZVN2106A D G S E-Line TO92 Compatible ABSOLUT

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www.DataSheet4U.com ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Pac

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LM4040 Precision micropower shunt voltage references Description The LM4040 is a family of bandgap circuits designed to achieve precision micro-power

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www.DataSheet4U.net P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=5Ω ZVP2106C G D REFER TO ZVP2

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830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes

Rating: 1 ★ (4 votes)

830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes

Rating: 1 ★ (4 votes)