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Hi-Sincerity Mocroelectronics
HBF422 - NPN EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY MICROELECTRONICS CORP. HBF422 NPN EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers Spec. No. : HE6404 .
Hi-Sincerity Mocroelectronics
HBD678 - NPN EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6625-A Issued Date : 1994.10.04 Revised Date : 2000.10.01 Page No. : 1/2 HBD678 NPN EPITAXIAL PLAN.
GME
SS8050 - Silicon Epitaxial Planar Transistor
Silicon Epitaxial Planar Transistor FEATURES z Collector Current.(IC= 1.5A） z Complementary To SS8550. Pb Lead-free z Collector dissipation:PC=300m.
Hi-Sincerity Mocroelectronics
HBD237 - NPN EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6622-A Issued Date : 1994.09.08 Revised Date : 2000.10.01 Page No. : 1/2 HBD237 NPN EPITAXIAL PLAN.
Hi-Sincerity Mocroelectronics
HBD675 - NPN EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6619-C Issued Date : 1994.07.22 Revised Date : 2000.10.01 Page No. : 1/3 HBD675 NPN EPITAXIAL PLAN.
GTM
GJ1182 - PNP SILICON EPITAXIAL PLANAR TRANSISTOR
www.DataSheet4U.com CORPORATION ISSUED DATE :2005/10/06 REVISED DATE : GJ1182 PNP SILICON EPITAXIAL PLANAR TRANSISTOR Description The GJ1182 is de.
Hi-Sincerity Mocroelectronics
HBD238 - PNP EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6621-A Issued Date : 1994.09.08 Revised Date : 2000.10.01 Page No. : 1/2 HBD238 PNP EPITAXIAL PLAN.
Hi-Sincerity Mocroelectronics
HBD677 - NPN EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6620-B Issued Date : 1994.07.22 Revised Date : 2000.10.01 Page No. : 1/3 HBD677 NPN EPITAXIAL PLAN.
Toshiba Semiconductor
1SS306 - Silicon Epitaxial Planar Type Diode
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 Ultra High Speed Switching Application Small package : SC-61 Low forward voltage : VF (2) =.
GTM
GJ122 - NPN EPITAXIAL PLANAR TRANSISTOR
www.DataSheet4U.com ISSUED DATE :2004/12/15 REVISED DATE :2005/12/23B GJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description The GJ122 is designed for.
Comset Semiconductor
2N4030 - Silicon Planar Epitaxial PNP Transistor
PNP 2N4030 – 2N4031 – 2N4032 – 2N4033 GENERAL PURPOSE AMPLIFIERS AND SWITCHES They are silicon planar epitaxial PNP transistors mounted in TO-39 meta.
Hi-Sincerity Mocroelectronics
H2N5551 - NPN EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No. : 1/5 H2N5551 NPN EPITAXIAL PLANA.
Mitsubishi Electric Semiconductor
2SC3019 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR
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STMicroelectronics
2N4033 - Silicon Planar Epitaxial PNP Transistor
2N4033 GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N4033 is a silicon planar epitaxial PNP transistors in Jedec TO-39 metal case primary int.
GME
TIP41C - Epitaxial Planar NPN Transistor
Epitaxial Planar NPN Transistor FEATURES z Complementary to TIP42C. Pb Lead-free Production specification TIP41C TO-220AB MAXIMUM RATING operatin.
GME
2SA1036 - Silicon Epitaxial Planar Transistor
Production specification Silicon Epitaxial Planar Transistor FEATURES Large IC.ICMAX. =-500mA. Pb Lead-free Low VCE(sat). Ideal for low-volta.
KEC
BC337 - EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=800mA. DC Current Gain : hFE=100 630 (VCE=.
Unisonic Technologies
D313 - NPN Epitaxial Planar Transistor
UTC D313 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC D313 is designed for use in general purpose amplifier a.
Dc Components
I882 - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
www.DataSheet4U.com DC COMPONENTS CO., LTD. R I882 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Descriptio.
GTM
GJ1060 - NPN EPITAXIAL PLANAR TRANSISTOR
www.DataSheet4U.com ISSUED DATE :2005/09/05 REVISED DATE : GJ1060 NPN EPITAXIAL PLANAR TRANSISTOR Description The GJ1060 is designed for relay dr.
