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MSC0205W 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2

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MSC0206SE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=

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MSC0207W -20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @

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MSC0211GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4

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MIF-PDP-1X02 MIF-PDP-1X03 MIF-PDP-1X04 w w w .D at aS MIF-PDP-1X05 MIF-PDP-1X06 MIF-PDP-1X07 MIF-PDP-1X08 MIF-PDP-1X09 MIF-PDP-1X10 MIF-PDP-1X1

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MIF-PVE-2X01 MIF-PVE-2X02 MIF-PVE-2X03 w w MIF-PVE-2X04 MIF-PVE-2X05 w MIF-PVE-2X06 .D MIF-PVE-2X07 MIF-PVE-2X08 at MIF-PVE-2X09 aS MIF-PVE

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MSP0205 -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4

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MSP0205A -12V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=

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MSP0304 -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS

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MSN0350K 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=4.5V ●

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MSN0330D 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =30A RDS(ON) <14mΩ @ VGS=10V RDS(ON) <25mΩ @ VGS=4.5V ● Hi

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MSN0325R 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ●

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HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) ADE-203-995B (Z) Rev. 1.0 Dec. 10, 1999 Description The Hitach

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MSN0880K 75V(D-S) N-Channel Enhancement Mode Power MOS FET Features ● VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V ● Special process technology fo

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MSC0206W 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2

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MSC0207GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=

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MSC0207SE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=

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MITSUBISHI LSIs M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY DESCRIPTION The MITSUBISHI M5M29F25

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MSN138 50V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ● Lead

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