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MSC0203S N and P-Channel Enhancement Mode Power MOS FET General Features ● N-Channel VDS = 20V,ID = 3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VG

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MSP0205A -12V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=

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MSP3415E -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4

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MSN0880K 75V(D-S) N-Channel Enhancement Mode Power MOS FET Features ● VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V ● Special process technology fo

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MSN06M2 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ● Le

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MSN06M3E 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD R

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MSP0205 -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4

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MSP0204E -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4

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MSP0304 -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS

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MSN6004F 600V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =600V,ID =4A RDS(ON) <2.4 Ω @ VGS=10V ● High density cell design

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MSC0205W 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2

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MSC0207W -20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @

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Samsung Electronics Fiberoptics products Loose Tube Cable - SJNA Single Jacket Non-Armored Description SAMSUNG Single Jacket Non-Armored cables are l

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MSP0203 -20V(D-S) P-Channel Enhancement Mode Power MOS FET GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-

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MSP2305A -12V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS

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MSN3400 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V

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MSN2304 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V ●

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MSN3402A 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5

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MSN2300 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =4A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ●

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MSN2300A 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 5.8A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V

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