FDD6606 mosfet equivalent, 30v n-channel powertrench mosfet.
* 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V
* Low gate charge
* Fast switching
* High performance trench technology for extremel.
* DC/DC converter
* Motor Drives
D
G S
D
G
D-PAK TO-252 (TO-252)
TA=25oC unless otherwise noted
S
Absolute.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching .
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