AFN1912 Overview
AFN1912, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-363 ) AFN1912 20V N-Channel Enhancement Mode MOSFET.