AFN5295S mosfet equivalent, 100v n-channel enhancement mode mosfet.
* ID=20A,RDS(ON)= 9.5mΩ@VGS=10V
* ID=15A,RDS(ON)=12mΩ@VGS=4.5V
* Super high density cell design for extremely low
RDS (ON)
* TO-252-2L package design
Pin.
Features
* ID=20A,RDS(ON)= 9.5mΩ@VGS=10V
* ID=15A,RDS(ON)=12mΩ@VGS=4.5V
* Super high density cell design f.
AFN5295S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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