AFN6561 Datasheet, Alfa-MOS

* 30V/3.6A,RDS(ON)=75mΩ@VGS=10V
* 30V/3.0A,RDS(ON)=102mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* TSOP-6 package design App.

Pin Description ( TSOP-6 ) AFN6561 30V N-Channel Enhancement Mode MOSFET Features
* 30V/3.6A,RDS(ON)=75mΩ@VGS=10V .

AFN6561, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.