AFN6561 - 30V N-Channel MOSFET

This page provides the datasheet information for the AFN6561, a member of the AFN6561-Alfa 30V N-Channel MOSFET family.

Product Overview

Alfa-MOS

Datasheet Details

Part number	AFN6561
Manufacturer	Alfa-MOS
File Size	348.13 KB
Description	30V N-Channel MOSFET
Datasheet	AFN6561 Datasheet
Additional preview pages of the AFN6561 datasheet.

AFN6561 Product details

Description

AFN6561, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

30V/3.6A,RDS(ON)=75mΩ@VGS=10V.
30V/3.0A,RDS(ON)=102mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
TSOP-6 package design.

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Published: Dec 1, 2018 |