AFN6561 Datasheet - Alfa-MOS

30V N-Channel MOSFET

AFN6561 Features

* 30V/3.6A,RDS(ON)=75mΩ@VGS=10V

* 30V/3.0A,RDS(ON)=102mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* TSOP-6 package design Application

* Power Management in Note book

* LED Display

* DC-DC System

* LCD Panel PPin Define Pin 1 2 3 4 5 6 Sy

AFN6561 General Description

AFN6561, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descriptio.

AFN6561 Datasheet (348.13 KB)

AFN6561 Datasheet Preview — Preview of AFN6561 PDF

Datasheet Details

Part number:

AFN6561

Manufacturer:

Alfa-MOS

File Size:

348.13 KB

Description:

30v n-channel mosfet.

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AFN6561 30V N-Channel MOSFET Alfa-MOS

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AFN6561 Features

AFN6561 General Description

Datasheet Details

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Description:

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