AFN6562 mosfet equivalent, n-channel mosfet.
30V/3.6A,RDS(ON)=70mΩ@VGS=10V 30V/3.0A,RDS(ON)=78mΩ@VGS=4.5V 30V/2.2A,RDS(ON)=145mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package desi.
Pin Description ( TSOP-6 )
AFN6562
30V N-Channel Enhancement Mode MOSFET
Features
30V/3.6A,RDS(ON)=70mΩ@VGS=10V 30V/3..
AFN6562, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.
Image gallery
Download