AFN6562 Datasheet - Alfa-MOS

N-Channel MOSFET

AFN6562 Features

* 30V/3.6A,RDS(ON)=70mΩ@VGS=10V 30V/3.0A,RDS(ON)=78mΩ@VGS=4.5V 30V/2.2A,RDS(ON)=145mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel PPin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2

AFN6562 General Description

AFN6562, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descriptio.

AFN6562 Datasheet (578.76 KB)

AFN6562 Datasheet Preview — Preview of AFN6562 PDF

Datasheet Details

Part number:

AFN6562

Manufacturer:

Alfa-MOS

File Size:

578.76 KB

Description:

N-channel mosfet.

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AFN6562 N-Channel MOSFET Alfa-MOS

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AFN6562 Features

AFN6562 General Description

Datasheet Details

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