* ID=8A,RDS(ON)=45mΩ@VGS=10V
* ID=6A,RDS(ON)=58mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* DFN5X6-8L package design Applica.

Pin Description ( DFN5X6-8L ) Features
* ID=8A,RDS(ON)=45mΩ@VGS=10V
* ID=6A,RDS(ON)=58mΩ@VGS=4.5V
* Super .

AFN6632S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN6670S

AFN6003S

AFN6011S

AFN6018S

AFN6027S

AFN6035S

AFN6095S

AFN6098S

AFN6202S

AFN6236S

AFN6238S

AFN6248S

AFN6252S