AFN7898S mosfet equivalent, 200v n-channel enhancement mode mosfet.
* ID=7A,RDS(ON)=105mΩ@VGS=10V
* ID=7A,RDS(ON)=115mΩ@VGS=7.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-resistance and m.
Pin Description ( DFN3X3-8L )
AFN7898S
200V N-Channel Enhancement Mode MOSFET
Features
* ID=7A,RDS(ON)=105mΩ@VGS=1.
AFN7898S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.
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