* 80V/15A,RDS(ON)=8.0mΩ@VGS=10V
* 80V/10A,RDS(ON)=11.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* TO-252-2L package design .

Features
* 80V/15A,RDS(ON)=8.0mΩ@VGS=10V
* 80V/10A,RDS(ON)=11.5mΩ@VGS=4.5V
* Super high density cell desig.

AFN8028S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN8205

AFN8206WS

AFN8411W

AFN8412W

AFN8415W

AFN8420W

AFN8439W

AFN8459

AFN8471W

AFN8904

AFN8918

AFN8936

AFN8968