AFN8420W mosfet equivalent, 200v n-channel enhancement mode mosfet.
* 200V/1.5A,RDS(ON)=580mΩ@VGS=10V
* 200V/1.0A,RDS(ON)=600mΩ@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* SOT-223 package design
.
Pin Description ( SOT-223 )
AFN8420W
200V N-Channel Enhancement Mode MOSFET
Features
* 200V/1.5A,RDS(ON)=580mΩ@VGS.
AFN8420W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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