Datasheet4U Logo Datasheet4U.com

AO3404 - N-Channel MOSFET

Description

The AO3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device may be used as a load switch or in PWM applications.

Standard Product AO3404 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 5.8A (VGS = 10V) RDS(ON) < 28m Ω (VGS = 10V) RDS(ON) < 43m Ω (VGS = 4.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current Power Dissipation B Maximum 30 ±20 5.8 4.9 20 1.4 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characterist.

📥 Download Datasheet

Datasheet preview – AO3404

📁 Similar Datasheet

  • AO3404 - N-Channel MOSFET (Kexin)
  • AO3400 - N-Channel MOSFET (Kexin)
  • AO3400 - N-Channel MOSFET (HOTTECH)
  • AO3400 - 30V N-Channel MOSFET (JinYu)
  • AO3400 - N-Channel MOSFET (VBsemi)
  • AO3401 - P-Channel MOSFET (VBsemi)
  • AO3401 - P-Channel MOSFET (HOTTECH)
  • AO3401 - P-Channel MOSFET (Kexin)
  • AO3401 - 30V P-Channel MOSFET (JinYu)
  • AO3401 - P-Channel Enhancement-Mode MOSFETs (HAOHAI)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com AO3404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Standard Product AO3404 is Pb-free (meets ROHS & Sony 259 specifications). AO3404L is a Green Product ordering option. AO3404 and AO3404L are electrically identical. Features VDS (V) = 30V ID = 5.8A (VGS = 10V) RDS(ON) < 28m Ω (VGS = 10V) RDS(ON) < 43m Ω (VGS = 4.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current Power Dissipation B Maximum 30 ±20 5.8 4.9 20 1.
Published: |