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AO4478 - 30V N-Channel MOSFET

General Description

The AO4478 uses advanced trench technology to provide excellent RDS(ON), low gate charge.

This device is suitable for use as general puspose, PWM and a load switch applications.

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AO4478 30V N-Channel MOSFET General Description The AO4478 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use ...

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e excellent RDS(ON), low gate charge. This device is suitable for use as general puspose, PWM and a load switch applications. Product Summary VDS (V) = 30V ID = 9A (VGS = 10V) RDS(ON) <19mΩ (VGS = 10V) RDS(ON) <26mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D D Bottom View D G S S S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current C Maximum 30 ±25 9.0 7.0 60 17 14 3.1 2.0 -55 to 150 Units V V VGS TA=25° C TA=70° C ID IDM Iar Ear PD TJ, TSTG Pulsed Drain Current Avalanche Current C Repetitive avalanche en