Datasheet Details
| Part number | AO4818 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 404.57 KB |
| Description | 30V Dual N-channel MOSFET |
| Download | AO4818 Download (PDF) |
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| Part number | AO4818 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 404.57 KB |
| Description | 30V Dual N-channel MOSFET |
| Download | AO4818 Download (PDF) |
|
|
|
The AO4818 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) ESD Protected 100% UIS Tested 100% Rg Tested 30V 8A <19mW < 23mW Top View SOIC-8 Bottom View Top View S2 1 8 D2 G2 2 7 D2 G S1 3 6 D1 G1 4 5 D1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 8 6.5 48 19 18 2 1.3 -55 to 150 D G S Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 48 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max 62.5 90 40 D S Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 7.1: March 2024 www.aosmd.com Page 1 of 6 AO4818 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 10 mA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.2 1.8 2.4 V ID(ON) On state drain current VGS=10V, VDS=5V 30 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A TJ=125°C 15.5 19 mW 21 25 VGS=4.5V, ID=4A 18.5 23 mW gFS Forward Transconductance VDS=5V, ID=8A 30 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V IS Maximum Body-Diode Continuous Current 2.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss
AO4818 30V Dual N-channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4818 | Dual N-Channel MOSFET | Kexin |
 |
AO4818 | Dual N-Channel MOSFET | VBsemi |
|
AO4818B | Dual N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4818B | 30V Dual N-channel MOSFET |
| AO4812 | 30V Dual N-Channel MOSFET |
| AO4812A | Dual N-Channel MOSFET |
| AO4813 | 30V Dual P-Channel MOSFET |
| AO4815 | Dual P-Channel MOSFET |
| AO4816 | Dual N-Channel MOSFET |
| AO4817 | Dual P-Channel MOSFET |
| AO4800 | 30V Dual N-Channel MOSFET |
| AO4800B | 30V Dual N-Channel MOSFET |
| AO4800BL | Dual N-Channel MOSFET |