Datasheet Details
| Part number | AO4842 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 222.97 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download |
AO4842 Download (PDF)
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| Part number | AO4842 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 222.97 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download |
AO4842 Download (PDF)
|
|
|
|
The AO4842 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
Product Summary VDS (V) = 30V ID = 7.7A (VGS = 10V) RDS(ON) < 21mW (VGS = 10V) RDS(ON) < 30mW (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C ID Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 7.7 6.5 64 2 1.44 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State RqJA 50 82 Maximum Junction-to-Lead C Steady-State RqJL 41 D1 G2 S1 Max 62.5 110 50 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 5.1: March 2024 www.aosmd.com Page 1 of 4 AO4842 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 64 VGS=10V, ID=7.7A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=5A gFS Forward Transconductance VDS=5V, ID=7.7A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg
AO4842 30V Dual N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4842 | Dual N-Channel MOSFET | Kexin |
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AO4842 | 30V Dual N-Channel MOSFET | VBsemi |
| MSKSEMI | AO4842 | Dual N-Channel MOSFET | MSKSEMI |
| Part Number | Description |
|---|---|
| AO4840 | 40V Dual N-Channel MOSFET |
| AO4844 | Dual N-Channel MOSFET |
| AO4800 | 30V Dual N-Channel MOSFET |
| AO4800B | 30V Dual N-Channel MOSFET |
| AO4800BL | Dual N-Channel MOSFET |
| AO4801 | Dual P-Channel MOSFET |
| AO4801A | 30V P-Channel MOSFET |
| AO4802 | Dual N-Channel MOSFET |
| AO4802L | Dual N-Channel MOSFET |
| AO4803 | Dual P-Channel MOSFET |